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SZMMSZ5247BT1G

The SZMMSZ5247BT1G is a high-voltage, high-power MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and renewable energy systems.

Description:

The SZMMSZ5247BT1G is an N-channel MOSFET with a drain-source voltage (Vds) of 550V and a continuous drain current (Id) of 47A. It features a low on-state resistance (Rds(on)) of 42 mOhm max, which helps to minimize power dissipation and improve efficiency in high-current applications.

Features:

• N-channel MOSFET
• Vds of 550V
• Id of 47A
• Rds(on) of 42 mOhm max
• Low gate charge for fast switching
• High input impedance
• Avalanche energy capable
• RoHS compliant

Applications:

The SZMMSZ5247BT1G is suitable for a wide range of power electronic applications, including:

• Motor control, such as in industrial machinery and automotive systems
• Power supplies, including switch mode power supplies (SMPS) and uninterruptible power supplies (UPS)
• Renewable energy systems, such as solar panel inverters and wind turbine converters
• Battery management systems for electric vehicles (EVs) and energy storage systems
• Industrial control systems, such as robotics and automation equipment

Overall, the SZMMSZ5247BT1G is a high-performance MOSFET that offers excellent electrical characteristics and reliability, making it an ideal choice for a variety of power electronic applications.