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UG3SC120009K4S
288-UG3SC120009K4S
PDF Datasheet
JFETs 1200V/9mO,SICFET,DG,G3,TO247-4
38 Weeks
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Tech Specifications
Mounting Style
Through Hole
Configuration
Single
Id - Continuous Drain Current
120 A
Vgs - Gate-Source Breakdown Voltage
- 25 V to 25 V
ECCN
EAR99
Transistor Polarity
N-Channel
Drain-Source Current at Vgs=0
6 uA
RoHS
RoHS Compliant
UG3SC120009K4S Description
JFETs 1200V/9mO,SICFET,DG,G3,TO247-4
FAQ
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