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DRA2123E0L
292-DRA2123E0L
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN
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Tech Specifications
Package/Case
TO-236-3
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
-300mV
Collector-emitter Voltage-Max
300mV
Continuous Collector Current
-100mA
Height
1.1mm
Length
2.9mm
Max Breakdown Voltage
50V
DRA2123E0L Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 mW Surface Mount MINI3-G3-B
FAQ
What operating temperature range does DRA2123E0L support?
DRA2123E0L has an operating temperature range of 150°C.
What package or case is DRA2123E0L available in?
What is DRA2123E0L?
What is the mounting type of DRA2123E0L?
Are there related or alternative parts for DRA2123E0L?
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