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DRA5114T0L
292-DRA5114T0L
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI3-F2-B, SC-85, 3 PIN
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Tech Specifications
Package/Case
SC
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
250mV
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
-100mA
Emitter Base Voltage (VEBO)
-6V
Height
0.9mm
Length
2mm
DRA5114T0L Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 150 mW Surface Mount SMini3-F2-B
FAQ
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