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DRA9113Z0L
292-DRA9113Z0L
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI3-F3-B, SC-89, 3 PIN
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Tech Specifications
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
250mV
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
-100mA
Emitter Base Voltage (VEBO)
-6V
Height
0.65mm
Length
1.6mm
Max Breakdown Voltage
50V
DRA9113Z0L Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 125 mW Surface Mount SSMini3-F3-B
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DRA9113Z0L is currently available on an inquiry basis. Please contact us for the latest stock information.
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