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Tech Specifications
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
Current Rating
-100mA
Lead Free
Lead Free
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Power Dissipation
300mW
Mount
Through Hole
UNR411100A Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 80 MHz 300 mW Through Hole NS-B1
FAQ
What is the mounting type of UNR411100A?
UNR411100A uses a Through Hole mounting style based on the listed product specifications.
What package or case is UNR411100A available in?
Is UNR411100A currently in stock?
What voltage specification is listed for UNR411100A?
Are there related or alternative parts for UNR411100A?
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