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Tech Specifications
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
Current Rating
100mA
Lead Free
Lead Free
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Power Dissipation
300mW
Mount
Through Hole
UNR421200A Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 MHz 300 mW Through Hole NS-B1
FAQ
What package or case is UNR421200A available in?
UNR421200A is available in the 1 package / case.
What is the mounting type of UNR421200A?
What is UNR421200A?
What voltage specification is listed for UNR421200A?
Is UNR421200A currently in stock?
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