ROHM Semiconductor

BD6563FV-LBE2

BD6563FV-LBE2 Description

The BD6563FV-LBE2 is a low-side gate driver IC designed by Rohm Semiconductor, a leading manufacturer in the electronics industry. This IC is part of the Power Management Integrated Circuits (PMIC) category and is housed in a 16SSOP package. Despite its obsolete status, the BD6563FV-LBE2 remains a reliable choice for applications requiring robust gate driving capabilities.

BD6563FV-LBE2 Features

The BD6563FV-LBE2 features three independent channels, each capable of driving low-side MOSFETs with a peak output current of 600mA for both sourcing and sinking. This makes it highly suitable for applications requiring high current handling and precise control. The IC operates over a wide supply voltage range of 10V to 25V, ensuring compatibility with various power supply systems.

Key technical specifications include:

• Number of Drivers: 3
• Current - Peak Output (Source, Sink): 600mA, 600mA
• Voltage - Supply: 10V ~ 25V
• Mounting Type: Surface Mount
• Package: Tape & Reel (TR)
• Moisture Sensitivity Level (MSL): 1 (Unlimited)

The BD6563FV-LBE2 also complies with industry standards, including ROHS3 and REACH, ensuring environmental and regulatory compliance. Its independent channel type allows for flexible and customized control, making it a versatile solution for a variety of applications.

BD6563FV-LBE2 Applications

The BD6563FV-LBE2 is ideal for applications that require efficient and reliable gate driving for low-side MOSFETs. Its high current handling capabilities and wide voltage range make it suitable for use in:

• Power Supplies: Providing efficient gate driving for MOSFETs in switch-mode power supplies.
• Motor Control: Driving low-side MOSFETs in motor control applications for precise speed and torque control.
• Industrial Equipment: Ensuring robust performance in industrial applications where high current and voltage handling are critical.

Conclusion of BD6563FV-LBE2

Despite being marked as obsolete, the BD6563FV-LBE2 remains a reliable and efficient gate driver IC for low-side MOSFETs. Its high current handling capabilities, wide voltage range, and independent channel design make it a versatile solution for various power management applications. The BD6563FV-LBE2's compliance with industry standards ensures it meets regulatory requirements, making it a suitable choice for engineers and designers in the electronics industry.