ROHM Semiconductor
BR25G128FVT-3GE2
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BR25G128FVT-3GE2 Description
BR25G128FVT-3GE2 Description
The BR25G128FVT-3GE2 is a high-performance EEPROM Memory IC Chip manufactured by ROHM Semiconductor. This device features a 128Kbit memory size organized as 16K x 8, making it ideal for applications requiring substantial non-volatile storage. The chip operates with a SPI memory interface, ensuring fast and reliable data transfer rates up to 20 MHz. With a wide supply voltage range of 1.6V to 5.5V, the BR25G128FVT-3GE2 is highly adaptable to various power supply conditions. The write cycle time for words and pages is a mere 5ms, providing efficient data writing capabilities. The device is available in a surface mount 8TSSOPB package, which is suitable for compact and space-constrained designs. The BR25G128FVT-3GE2 is also RoHS3 compliant and RE unaffectedACH, ensuring environmental and regulatory compliance. The product is classified under HTSUS code 8542.32.0051 and has a moisture sensitivity level (MSL) of 1 (unlimited), making it suitable for a wide range of manufacturing processes.
BR25G128FVT-3GE2 Features
- High Memory Capacity: The BR25G128FVT-3GE2 offers a substantial 128Kbit EEPROM memory size, organized in a 16K x 8 format, providing ample storage for complex data sets.
- Fast Data Transfer: With a clock frequency of 20 MHz, the SPI interface ensures rapid data transfer, making it suitable for high-speed applications.
- Wide Voltage Range: The device operates within a broad voltage range of 1.6V to 5.5V, offering flexibility in power supply requirements.
- Efficient Write Cycle: The write cycle time of 5ms for words and pages ensures quick data writing, enhancing overall system performance.
- Surface Mount Technology: The 8TSSOPB package is designed for surface mount applications, making it for ideal compact and space-efficient designs.
- Compliance and Safety: The BR25G128FVT-3GE2 is RoHS3 compliant and REACH unaffected, ensuring it meets stringent environmental and regulatory standards.
- Durability: With a moisture sensitivity level (MSL) of 1 (unlimited), the device is highly durable and suitable for various manufacturing environments.
BR25G128FVT-3GE2 Applications
The BR25G128FVT-3GE2 is well-suited for a variety of applications that require reliable non-volatile memory solutions. Some specific use cases include:
- Embedded Systems: Ideal for embedded systems where data retention is critical, such as firmware storage and configuration data.
- Industrial Automation: Suitable for industrial applications where robustness and reliability are paramount, such as PLCs and control systems.
- Consumer Electronics: Perfect for consumer electronics that require non-volatile memory for storing user settings and calibration data.
- Telecommunications: Useful in telecommunications equipment for storing configuration parameters and network settings.
- Automotive Systems: Applicable in automotive applications for storing critical data such as ECU settings and diagnostic information.
Conclusion of BR25G128FVT-3GE2
The BR25G128FVT-3GE2 from ROHM Semiconductor stands out as a versatile and reliable EEPROM Memory IC Chip. Its high memory capacity, fast data transfer rates, and wide voltage range make it a robust solution for a variety of applications. The device's compliance with environmental and regulatory standards, along with its durability and efficient write cycle times, further enhance its appeal. Whether used in embedded systems, industrial automation, consumer electronics, telecommunications, or automotive systems, the BR25G128FVT-3GE2 offers a reliable and efficient non-volatile memory solution that meets the demands of modern electronics.
FAQ
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.56320 | $0.56 |
| 10+ | $0.52624 | $5.26 |
| 25+ | $0.51181 | $12.80 |
| 50+ | $0.50107 | $25.05 |
| 100+ | $0.49007 | $49.01 |



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