ROHM Semiconductor Tariff Inquiry

BR93G46FVT-3AGE2

BR93G46FVT-3AGE2 Description

The BR93G46FVT-3AGE2 is a high-performance 1Kbit EEPROM memory IC designed by ROHM Semiconductor. This device is optimized for a wide range of applications requiring reliable and efficient data storage solutions. With a clock frequency of 3 MHz, the BR93G46FVT-3AGE2 ensures fast data access and transfer, making it suitable for systems that demand high-speed operation. The memory is organized in a 64 x 16 format, providing a structured and efficient way to store data.

The BR93G46FVT-3AGE2 features a Microwire memory interface, which is known for its simplicity and reliability. This interface allows for easy integration into various electronic systems, ensuring compatibility and ease of use. The device is housed in an 8TSSOPB package, which is ideal for surface mount applications, providing a compact and robust solution for modern electronic designs.

BR93G46FVT-3AGE2 Features

• Memory Size and Organization: The BR93G46FVT-3AGE2 offers a 1Kbit memory size, organized in a 64 x 16 format. This configuration ensures efficient data storage and retrieval, making it suitable for applications requiring small but reliable memory solutions.
• High-Speed Operation: With a clock frequency of 3 MHz, this EEPROM IC provides high-speed data access and transfer capabilities, ensuring that data can be read and written quickly and efficiently.
• Wide Voltage Range: The device operates within a voltage range of 1.7V to 5.5V, providing flexibility in power supply requirements and ensuring compatibility with a variety of electronic systems.
• Microwire Interface: The Microwire memory interface simplifies the integration process, making it easier to connect the EEPROM to the host system.
• Surface Mount Technology: The BR93G46FVT-3AGE2 is designed for surface mount applications, providing a compact and reliable solution that is ideal for modern electronic designs.
• Fast Write Cycle Time: The write cycle time for this EEPROM is 5ms, ensuring that data can be written quickly and efficiently, reducing the overall system latency.
• Compliance and Standards: The BR93G46FVT-3AGE2 is REACH unaffected and ROHS3 compliant, ensuring that it meets the highest environmental and safety standards. It also has a moisture sensitivity level (MSL) of 1 (unlimited), making it suitable for a wide range of environmental conditions.

BR93G46FVT-3AGE2 Applications

The BR93G46FVT-3AGE2 is ideal for a variety of applications that require reliable and efficient data storage solutions. Some specific use cases include:

• Consumer Electronics: Ideal for devices such as smartphones, tablets, and other consumer electronics where small form factor and high-speed data access are crucial.
• Industrial Systems: Suitable for industrial control systems, sensors, and other applications where reliable data storage and fast data transfer are essential.
• Automotive Electronics: The robustness and wide operating voltage range make it suitable for automotive applications, where reliability and performance are paramount.
• Medical Devices: The BR93G46FVT-3AGE2 can be used in medical devices that require small, reliable memory solutions for storing critical data.

Conclusion of BR93G46FVT-3AGE2

The BR93G46FVT-3AGE2 from ROHM Semiconductor is a versatile and high-performance EEPROM memory IC that offers a wide range of benefits for various applications. Its high-speed operation, wide voltage range, and compact surface mount design make it an ideal choice for modern electronic systems. The device's compliance with environmental and safety standards ensures that it meets the highest industry requirements. Whether used in consumer electronics, industrial systems, automotive applications, or medical devices, the BR93G46FVT-3AGE2 provides reliable and efficient data storage solutions, making it a standout choice in the EEPROM market.