ROHM Semiconductor_IMD2AT108
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ROHM Semiconductor
IMD2AT108

293-IMD2AT108
PDF Datasheet
TRANS NPN/PNP PREBIAS 0.3W SMT6
13 Weeks

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Tech Specifications

Frequency - Transition
250MHz
Current - Collector (Ic) (Max)
100mA
Resistor - Base (R1)
22kOhms
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
50V
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IMD2AT108 Description

IMD2AT108 Description

The IMD2AT108 is a Bipolar Transistor Array from ROHM Semiconductor, designed for pre-biased applications. This NPN/PNP prebiased transistor array is housed in a compact SMT6 package, making it suitable for surface mount applications. With a maximum collector-emitter breakdown voltage of 50V and a maximum power dissipation of 300mW, the IMD2AT108 is well-suited for various electronic circuits.

IMD2AT108 Features

  • Frequency - Transition: 250MHz, ensuring high-speed switching capabilities
  • Current - Collector (Ic) (Max): 100mA, providing ample current handling capability
  • Resistor - Base (R1): 22kOhms, and Resistor - Emitter Base (R2): 22kOhms, offering precise biasing
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, contributing to low power consumption
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V, ensuring reliable current amplification
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), indicating excellent resistance to moisture
  • RoHS Status: ROHS3 Compliant, adhering to environmental regulations
  • REACH Status: REACH Unaffected, ensuring compliance with chemical regulations

IMD2AT108 Applications

The IMD2AT108's unique combination of high-frequency performance, low power consumption, and pre-biased design make it ideal for a variety of applications, including:

  1. Audio Amplifiers: Utilizing the IMD2AT108's high-frequency response and low distortion characteristics for clear audio output.
  2. Power Management Circuits: Benefiting from the device's ability to handle up to 100mA of collector current and 300mW of power dissipation.
  3. Communication Systems: Leveraging the 250MHz transition frequency for high-speed data transmission and signal processing.
  4. Automotive Electronics: Employing the IMD2AT108's robustness and compliance with environmental regulations for reliable performance in harsh automotive environments.

Conclusion of IMD2AT108

The IMD2AT108 Bipolar Transistor Array from ROHM Semiconductor offers a compelling solution for designers seeking a high-performance, pre-biased NPN/PNP transistor array. Its combination of technical specifications, unique features, and compliance with environmental regulations make it an excellent choice for a wide range of applications, from audio amplifiers to automotive electronics. With the IMD2AT108, designers can achieve reliable performance and compliance with industry standards, all in a compact SMT6 package.

FAQ

Are there related or alternative parts for IMD2AT108?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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3000+ $0.03780 $113.40
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