ROHM Semiconductor_IMD3AT108
original

ROHM Semiconductor
IMD3AT108

293-IMD3AT108
PDF Datasheet
TRANS NPN/PNP PREBIAS 0.3W SMT6
13 Weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Configuration
Dual
PPAP
No
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
50V
Automotive
No
Typical Resistor Ratio
1
Supplier Package
SMT
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Show More

IMD3AT108 Description

IMD3AT108 Description

The IMD3AT108 is a Bipolar Transistor Array from ROHM Semiconductor, designed for pre-biased NPN/PNP applications. This Surface Mount device offers a 250MHz frequency transition, making it suitable for high-speed signal processing. With a maximum collector current (Ic) of 100mA and a collector-emitter breakdown voltage of 50V, the IMD3AT108 delivers robust performance in various electronic systems.

IMD3AT108 Features

  • Technical Specifications:

    • Frequency - Transition: 250MHz
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • Power - Max: 300mW
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 500nA
  • Performance Benefits:

    • Low Vce saturation of 300mV at 500µA and 10mA, ensuring efficient operation
    • High DC current gain (hFE) of 30 at 5mA and 5V, providing excellent amplification
    • Moisture Sensitivity Level (MSL) of 1, indicating unlimited storage time before reflow soldering
  • Unique Advantages:

    • Active product status, ensuring ongoing availability and support
    • REACH Unaffected and ROHS3 Compliant, meeting environmental and safety regulations
    • EAR99 ECCN, facilitating international trade and distribution

IMD3AT108 Applications

The IMD3AT108 is ideal for various applications where high-speed signal processing and efficient power management are crucial:

  1. Audio and Video Amplifiers: Utilize the IMD3AT108's high-frequency transition and low Vce saturation for clear audio and video signal amplification.
  2. Communication Systems: Leverage the device's 250MHz frequency transition for reliable signal processing in communication equipment.
  3. Industrial Control Systems: Benefit from the IMD3AT108's robust performance and high collector-emitter breakdown voltage in demanding industrial environments.
  4. Automotive Electronics: Employ the device's low power consumption and high reliability in automotive electronic systems, such as infotainment and control modules.

Conclusion of IMD3AT108

The IMD3AT108 from ROHM Semiconductor is a versatile Bipolar Transistor Array, offering a combination of high-speed performance, efficient power management, and robust reliability. Its unique features, such as low Vce saturation and high DC current gain, make it an excellent choice for a wide range of applications, including audio/video amplifiers, communication systems, industrial control systems, and automotive electronics. With its active product status, REACH and ROHS compliance, and EAR99 ECCN, the IMD3AT108 is a reliable and environmentally friendly solution for your electronic design needs.

FAQ

Are there related or alternative parts for IMD3AT108?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What voltage specification is listed for IMD3AT108?
What package or case is IMD3AT108 available in?
Does IMD3AT108 have quantity-based pricing?
What is the mounting type of IMD3AT108?
Availability (In Stock : 3349 )
Quantity Unit Price Ext. Price
10+ $0.08388 $0.84
100+ $0.06743 $6.74
300+ $0.05920 $17.76
ADD TO CART
QUICK ORDER
Unit Price $0.00000
Subtotal $0.00
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ