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STMicroelectronics
PD20010TR-E
285-PD20010TR-E
10W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package
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Tech Specifications
Continuous Drain Current (ID)
5A
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Frequency
2GHz
Gain
11dB
Gate to Source Voltage (Vgs)
15V
Max Frequency
1GHz
Max Operating Temperature
150°C
PD20010TR-E Description
RF Mosfet 13.6 V 150 mA 2GHz 11dB 10W PowerSO-10RF (Formed Lead)
FAQ
Are there related or alternative parts for PD20010TR-E?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What package or case is PD20010TR-E available in?
What voltage specification is listed for PD20010TR-E?
What operating temperature range does PD20010TR-E support?
What is the mounting type of PD20010TR-E?
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