German
Japanese
Portuguese
Korea
Mexico
Dutch
STMicroelectronics
PD20010TR-E
285-PD20010TR-E
10W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible quality
.png)
Tech Specifications
Continuous Drain Current (ID)
5A
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Frequency
2GHz
Gain
11dB
Gate to Source Voltage (Vgs)
15V
Max Frequency
1GHz
Max Operating Temperature
150°C
PD20010TR-E Description
RF Mosfet 13.6 V 150 mA 2GHz 11dB 10W PowerSO-10RF (Formed Lead)
FAQ
What voltage specification is listed for PD20010TR-E?
The listed voltage-related specification for PD20010TR-E is 40V.
Is PD20010TR-E currently in stock?
What operating temperature range does PD20010TR-E support?
What is PD20010TR-E?
What package or case is PD20010TR-E available in?
Quick Quote
ADD TO RFQ LIST
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
.png?x-oss-process=image/format,webp/resize,h_32)
