ROHM Semiconductor_IMH23T110
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ROHM Semiconductor
IMH23T110

293-IMH23T110
PDF Datasheet
TRANS PREBIAS DUAL NPN SMT6
13 Weeks

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Tech Specifications

Frequency - Transition
150MHz
Current - Collector (Ic) (Max)
600mA
Resistor - Base (R1)
4.7kOhms
Vce Saturation (Max) @ Ib, Ic
150mV @ 2.5mA, 50mA
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
20V
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IMH23T110 Description

IMH23T110 Description

The IMH23T110 is a high-performance, pre-biased dual NPN bipolar transistor array designed and manufactured by ROHM Semiconductor. This device is specifically engineered for applications requiring low power consumption, high frequency performance, and reliable operation. With a frequency transition of 150MHz, the IMH23T110 is well-suited for a variety of high-speed communication and signal processing tasks.

IMH23T110 Features

  • High-Frequency Performance: The IMH23T110 boasts a frequency transition of 150MHz, making it an excellent choice for high-speed applications.
  • Low Power Consumption: With a maximum power rating of 300mW, this device is ideal for battery-powered and energy-efficient applications.
  • Robust Current Handling: Capable of handling a maximum collector current (Ic) of 600mA, the IMH23T110 is suitable for applications requiring high current drive.
  • Low Saturation Voltage: The device offers a low Vce saturation voltage of 150mV at 2.5mA and 50mA, which is beneficial for maintaining low power dissipation.
  • Surface Mount Technology: The IMH23T110 is designed for surface mount applications, providing a compact and reliable solution for space-constrained designs.
  • Compliance and Regulations: This device is REACH unaffected, RoHS3 compliant, and classified under EAR99, ensuring regulatory compliance in various markets.

IMH23T110 Applications

The IMH23T110 is ideal for a wide range of applications due to its combination of high-frequency performance, low power consumption, and robust current handling capabilities. Some specific use cases include:

  • Wireless Communication Systems: The high-frequency performance makes it suitable for use in wireless communication systems, such as mobile phones and Wi-Fi routers.
  • Audio Amplifiers: The low saturation voltage and high current handling capabilities make it an excellent choice for audio amplifier applications.
  • Signal Processing Circuits: The device's high-frequency performance and low power consumption make it ideal for use in signal processing circuits, such as filters and mixers.
  • Automotive Electronics: The IMH23T110 can be used in various automotive electronics applications, such as infotainment systems and sensor interfaces.

Conclusion of IMH23T110

In conclusion, the IMH23T110 from ROHM Semiconductor is a versatile and high-performing pre-biased dual NPN bipolar transistor array. Its unique combination of high-frequency performance, low power consumption, and robust current handling capabilities make it an excellent choice for a wide range of applications, including wireless communication systems, audio amplifiers, signal processing circuits, and automotive electronics. With its compliance with various regulations and its compact surface mount design, the IMH23T110 is a reliable and efficient solution for modern electronic design challenges.

FAQ

What is IMH23T110?
IMH23T110 is a Bipolar Transistor Arrays, Pre-Biased from ROHM Semiconductor. This product page provides its main specifications, pricing information, availability, and inquiry options.
What voltage specification is listed for IMH23T110?
What is the mounting type of IMH23T110?
What operating temperature range does IMH23T110 support?
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Availability (In Stock : 6200 )
Quantity Unit Price Ext. Price
5+ $0.15012 $0.75
50+ $0.12024 $6.01
150+ $0.10531 $15.80
500+ $0.09412 $47.06
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