ROHM Semiconductor_MSM5118160F-60T3K-MT
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ROHM Semiconductor
MSM5118160F-60T3K-MT

774-MSM5118160F-60T3K-MT
IC DRAM 16MBIT PARALLEL 50TSOP

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Tech Specifications

Operating Temperature
0°C ~ 70°C (TA)
Memory Interface
Parallel
ECCN
EAR99
Memory Organization
1M x 16
Mounting Type
-
Memory Type
Volatile
Product Status
Obsolete
Supplier Device Package
-
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MSM5118160F-60T3K-MT Description

MSM5118160F-60T3K-MT Description

The MSM5118160F-60T3K-MT is a high-performance Dynamic Random Access Memory (DRAM) IC designed by Rohm Semiconductor. This 16Mbit memory device features a parallel memory interface and is organized as 1M x 16, providing a robust solution for various memory-intensive applications. The MSM5118160F-60T3K-MT operates within a supply voltage range of 4.5V to 5.5V and has an access time of 30 ns, ensuring fast data retrieval and efficient performance. It is housed in a 50TSOP package, which is both compact and reliable, making it suitable for a wide range of electronic systems.

MSM5118160F-60T3K-MT Features

  • Memory Type and Organization: The MSM5118160F-60T3K-MT is a volatile DRAM with a memory organization of 1M x 16, offering a total memory size of 16Mbit. This configuration ensures that it can handle large volumes of data efficiently.
  • Access Time: With an access time of 30 ns, this DRAM IC provides rapid data retrieval, which is crucial for applications requiring high-speed processing.
  • Operating Temperature: The device operates reliably within a temperature range of 0°C to 70°C (TA), making it suitable for use in various environmental conditions.
  • Voltage Range: The supply voltage range of 4.5V to 5.5V ensures compatibility with a variety of power supply systems, enhancing its versatility.
  • Compliance and Standards: The MSM5118160F-60T3K-MT is REACH unaffected and RoHS3 compliant, adhering to stringent environmental and safety regulations.
  • Packaging: The 50TSOP package format offers a balance between compactness and reliability, making it ideal for space-constrained applications.
  • Moisture Sensitivity Level (MSL): With an MSL of 2 (1 Year), the device is protected against moisture damage during storage and handling.

MSM5118160F-60T3K-MT Applications

The MSM5118160F-60T3K-MT is well-suited for a variety of applications where high-speed data access and reliable memory performance are critical. Some specific use cases include:

  • Computing Systems: Ideal for use in desktop computers, servers, and workstations where fast memory access is essential for efficient processing.
  • Consumer Electronics: Suitable for devices such as gaming consoles, multimedia players, and smart TVs that require high-speed memory to handle complex graphics and data processing.
  • Industrial Control Systems: The robustness and reliability of the MSM5118160F-60T3K-MT make it suitable for industrial applications where memory integrity and performance are paramount.
  • Telecommunications: In communication systems, this DRAM IC can be used for buffering and processing large amounts of data quickly, ensuring smooth operation.

Conclusion of MSM5118160F-60T3K-MT

The MSM5118160F-60T3K-MT from Rohm Semiconductor is a versatile and high-performance DRAM IC that offers significant advantages over similar models. Its fast access time, reliable operation, and compliance with industry standards make it an ideal choice for a wide range of applications. Despite being marked as obsolete, the MSM5118160F-60T3K-MT remains a valuable component for systems that require robust and efficient memory solutions.

FAQ

What voltage specification is listed for MSM5118160F-60T3K-MT?
The listed voltage-related specification for MSM5118160F-60T3K-MT is 4.5V ~ 5.5V.
What operating temperature range does MSM5118160F-60T3K-MT support?
What is the mounting type of MSM5118160F-60T3K-MT?
What package or case is MSM5118160F-60T3K-MT available in?
What is MSM5118160F-60T3K-MT?
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