ROHM Semiconductor_QS5K2TR
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ROHM Semiconductor
QS5K2TR

289-QS5K2TR
PDF Datasheet
MOSFET 2N-CH 30V 2A TSMT5
21 Weeks

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Tech Specifications

Configuration
2 N-Channel (Dual) Common Source
Typical Turn-Off Delay Time (ns)
21
Maximum Gate Source Leakage Current (nA)
10000
Input Capacitance (Ciss) (Max) @ Vds
175pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
3.9nC @ 4.5V
Typical Rise Time (ns)
10
PPAP
No
Channel Mode
Enhancement
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QS5K2TR Description

QS5K2TR Description

The QS5K2TR is a high-performance MOSFET (Metal Oxide) device from ROHM Semiconductor, designed for applications requiring robust power handling and low power consumption. This 2N-channel device is built on advanced technology, offering a maximum drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 2A at 25°C. With a logic level gate feature, it ensures compatibility with digital systems and reduces power consumption. The device is mounted on a surface mount package, specifically the TSMT5, making it suitable for compact and space-constrained applications.

QS5K2TR Features

  • Operating Temperature: The QS5K2TR can operate within a wide temperature range of 150°C (TJ), ensuring reliable performance in various environmental conditions.
  • Input Capacitance (Ciss): With a maximum input capacitance of 175pF at 10V, the device offers fast switching speeds and low power consumption.
  • Gate Charge (Qg): The maximum gate charge is 3.9nC at 4.5V, contributing to the device's high efficiency and low power dissipation.
  • Rds On (Max): The maximum on-resistance (Rds On) is 100mOhm at 2A and 4.5V, which minimizes power loss and heat generation.
  • Vgs(th) (Max): The maximum threshold voltage (Vgs(th)) is 1.5V at 1mA, ensuring reliable switching and low power consumption.
  • Power - Max: The device can handle a maximum power of 1.25W, making it suitable for various power applications.
  • Moisture Sensitivity Level (MSL): With an MSL of 1 (Unlimited), the QS5K2TR is resistant to moisture and can be stored and used in various environments without degradation.

QS5K2TR Applications

The QS5K2TR is ideal for applications that require high power handling, low power consumption, and fast switching speeds. Some specific use cases include:

  1. Power Management Systems: Due to its high power handling capabilities and low on-resistance, the QS5K2TR is suitable for power management systems in consumer electronics, industrial equipment, and automotive applications.
  2. Digital Systems: The logic level gate feature makes it compatible with digital systems, making it an excellent choice for digital power management and signal processing applications.
  3. Automotive Applications: The wide operating temperature range and high power handling capabilities make the QS5K2TR suitable for automotive applications, such as power windows, seat controls, and lighting systems.

Conclusion of QS5K2TR

The QS5K2TR from ROHM Semiconductor is a versatile and high-performance MOSFET device that offers a unique combination of high power handling, low power consumption, and fast switching speeds. Its advanced features, such as the logic level gate and low on-resistance, make it an ideal choice for various applications, including power management systems, digital systems, and automotive applications. With its robust performance and reliability, the QS5K2TR is a valuable addition to any electronics design.

FAQ

Is QS5K2TR currently in stock?
Yes. QS5K2TR currently shows 3047 unit(s) in stock.
What operating temperature range does QS5K2TR support?
What is the standard lead time for QS5K2TR?
Are there related or alternative parts for QS5K2TR?
What voltage specification is listed for QS5K2TR?
Availability (In Stock : 3047 )
Quantity Unit Price Ext. Price
5+ $0.30768 $1.54
50+ $0.24847 $12.42
150+ $0.22309 $33.46
500+ $0.16588 $82.94
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