ROHM Semiconductor_QS8J4TR
original

ROHM Semiconductor
QS8J4TR

289-QS8J4TR
PDF Datasheet
MOSFET 2P-CH 30V 4A TSMT8
20 Weeks

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Tech Specifications

Operating Temperature
150°C (TJ)
FET Feature
Logic Level Gate
Configuration
2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds
800pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
13nC @ 10V
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Active
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QS8J4TR Description

QS8J4TR Description

The QS8J4TR is a high-performance MOSFET (Metal Oxide) device manufactured by ROHM Semiconductor, designed for applications requiring robust power handling and precise control. This MOSFET array features two-channel, logic-level gate capabilities, making it ideal for a variety of electronic systems. With an operating temperature range of 150°C (TJ) and a maximum power rating of 550mW, the QS8J4TR is built to withstand harsh conditions while maintaining high efficiency.

QS8J4TR Features

  • Operating Temperature: The QS8J4TR can operate within a wide temperature range of -55°C to 150°C, ensuring reliable performance in various environments.
  • FET Feature: The logic-level gate feature allows for easy integration with digital circuits, simplifying system design and reducing component count.
  • Input Capacitance (Ciss): With a maximum input capacitance of 800pF @ 10V, the QS8J4TR offers fast switching speeds and low power consumption.
  • Gate Charge (Qg): The maximum gate charge of 13nC @ 10V contributes to the device's high-speed performance and low power dissipation.
  • Rds On (Max): The QS8J4TR boasts a low on-resistance of 56mOhm @ 4A, 10V, which minimizes power loss and improves efficiency.
  • Vgs(th) (Max): The maximum threshold voltage of 2.5V @ 1mA ensures consistent operation across different gate voltage levels.
  • Drain to Source Voltage (Vdss): The device can handle a maximum drain-source voltage of 30V, making it suitable for high-voltage applications.
  • Mounting Type: The surface mount packaging allows for compact and efficient board layouts, reducing overall system size and weight.
  • RoHS Compliance: The QS8J4TR is compliant with RoHS3 standards, making it an environmentally friendly choice for electronic designs.

QS8J4TR Applications

The QS8J4TR's unique combination of high power handling, low on-resistance, and logic-level gate capabilities make it an ideal choice for various applications, including:

  • Power Management Systems: The device's high power rating and low on-resistance make it suitable for power conversion and distribution applications.
  • Automotive Electronics: The wide operating temperature range and robust performance make the QS8J4TR ideal for automotive electronics, such as engine control units and powertrain systems.
  • Industrial Control Systems: The device's ability to handle high voltages and temperatures makes it suitable for use in industrial control systems, such as motor drives and process control applications.
  • Communication Systems: The logic-level gate feature and low input capacitance make the QS8J4TR suitable for use in communication systems, such as base stations and signal processing units.

Conclusion of QS8J4TR

The QS8J4TR from ROHM Semiconductor is a versatile and high-performance MOSFET array that offers a unique combination of features, making it an excellent choice for a wide range of applications. Its high power handling, low on-resistance, and logic-level gate capabilities, combined with its wide operating temperature range and RoHS compliance, make it a reliable and environmentally friendly solution for demanding electronic systems.

FAQ

What voltage specification is listed for QS8J4TR?
The listed voltage-related specification for QS8J4TR is 30V.
Is QS8J4TR currently in stock?
What is the standard lead time for QS8J4TR?
What package or case is QS8J4TR available in?
Does QS8J4TR have quantity-based pricing?
Availability (In Stock : 1 )
Quantity Unit Price Ext. Price
1+ $1.89580 $1.90
10+ $1.59020 $15.90
30+ $1.39800 $41.94
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Unit Price $1.89580
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