ROHM Semiconductor_RD3P050SNTL1
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ROHM Semiconductor
RD3P050SNTL1

278-RD3P050SNTL1
PDF Datasheet
MOSFET N-CH 100V 5A TO252
16 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
530 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
Product Status
Active
Supplier Device Package
TO-252
Drain to Source Voltage (Vdss)
100 V
Power Dissipation-Max
15W (Tc)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
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RD3P050SNTL1 Description

RD3P050SNTL1 Description

The RD3P050SNTL1 is a high-performance N-Channel MOSFET from ROHM Semiconductor, designed for applications requiring high efficiency and reliability. With a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 5A at 25°C, this device is well-suited for power management and control in various electronic systems. The RD3P050SNTL1 features a low on-resistance (Rds On) of 190mOhm at 5A and 10V, ensuring minimal power loss and high efficiency. Its surface-mount packaging and tape & reel packaging make it ideal for automated assembly processes.

RD3P050SNTL1 Features

  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 5A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25V
  • Operating Temperature: 150°C (TJ)
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Package: Tape & Reel (TR)
  • Product Status: Active
  • REACH Status: REACH Unaffected
  • RoHS Status: ROHS3 Compliant
  • ECCN: EAR99
  • HTSUS: 8541.29.0095

RD3P050SNTL1 Applications

The RD3P050SNTL1 is ideal for a wide range of applications due to its high performance and reliability. Some specific use cases include:

  1. Power Management: The device's high voltage and current ratings make it suitable for power management in various electronic systems, such as power supplies, battery chargers, and inverters.
  2. Motor Control: The low on-resistance and high efficiency of the RD3P050SNTL1 make it an excellent choice for motor control applications, including industrial automation, robotics, and automotive systems.
  3. Electronic Devices: The device's high temperature rating and moisture sensitivity level make it suitable for use in electronic devices that operate in harsh environments, such as industrial equipment and outdoor electronics.

Conclusion of RD3P050SNTL1

The RD3P050SNTL1 from ROHM Semiconductor is a high-performance N-Channel MOSFET that offers exceptional efficiency and reliability for a wide range of applications. Its unique combination of high voltage and current ratings, low on-resistance, and high temperature operation make it an ideal choice for power management, motor control, and electronic devices in harsh environments. With its active product status and compliance with REACH and RoHS regulations, the RD3P050SNTL1 is a reliable and environmentally friendly solution for your electronic design needs.

FAQ

What is RD3P050SNTL1?
RD3P050SNTL1 is a Single FETs, MOSFETs from ROHM Semiconductor. This product page provides its main specifications, pricing information, availability, and inquiry options.
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