STMicroelectronics_STW16N65M5
original

STMicroelectronics
STW16N65M5

278-STW16N65M5
PDF Datasheet
MOSFET MDmesh V 650V 12A 710V VDSS

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Tech Specifications

Package/Case
TO-247-3
Continuous Drain Current (ID)
12A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
270mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
279MR
Fall Time
8ns
Gate to Source Voltage (Vgs)
25V
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STW16N65M5 Description

N-Channel 650 V 12A (Tc) 90W (Tc) Through Hole TO-247-3

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