ROHM Semiconductor_RS1E240GNTB

ROHM Semiconductor
RS1E240GNTB  
Single FETs, MOSFETs

ROHM Semiconductor
RS1E240GNTB
278-RS1E240GNTB
Ersa
ROHM Semiconductor-RS1E240GNTB-datasheets-8942092.pdf
MOSFET N-CH 30V 24A 8HSOP
In Stock : 2485

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    RS1E240GNTB Description

    Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the RS1E240GNTB belongs to can be classified under the Discrete Semiconductors. RS1E240GNTB is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. RS1E240GNTB provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. ROHM Semiconductor plays a crucial role in ensuring the smooth flow of goods and meeting market demand. ROHM Semiconductor is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, ROHM Semiconductor builds trust with consumers and enhances the overall reputation of their products.

    Tech Specifications

    FET Type
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Product Status
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Power Dissipation (Max)
    Package / Case
    Technology
    REACH Status
    Mfr
    Vgs (Max)
    RoHS Status
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    FET Feature
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Series
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Base Product Number
    Unit Weight
    Configuration
    Id - Continuous Drain Current
    Channel Mode
    Fall Time
    RoHS
    Qg - Gate Charge
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Maximum Operating Temperature
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    RS1E240GNTB Documents

    Download datasheets and manufacturer documentation for RS1E240GNTB

    Ersa HSMT8 TB Taping Spec       RS1E240GNTB      
    Ersa Transistor, MOSFET Flammability       HSOP8 Part Marking       HSOP8DAuAlRLL Inner Structure      
    Ersa HSMT8 TB Taping Spec      
    Ersa RS1E240GN Spice Model      
    Ersa Transistor Whisker Info       RS1E240GN ESD Data       HSOP-AuAl-HF Constitution Material List       Transistor, MOSFET Level 1 MSL      

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