ROHM Semiconductor_RT1A060APTR

ROHM Semiconductor
RT1A060APTR  
Single FETs, MOSFETs

ROHM Semiconductor
RT1A060APTR
278-RT1A060APTR
Ersa
ROHM Semiconductor-RT1A060APTR-datasheets-5278867.pdf
MOSFET P-CH 12V 6A 8TSST
In Stock : 2180

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ersa FreeSample ersa flow
ISO9001
Quality Policy
ISO45001
ISO14001

RT1A060APTR Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the RT1A060APTR belongs to can be classified under the Discrete Semiconductors. RT1A060APTR is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. RT1A060APTR provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. ROHM Semiconductor plays a crucial role in ensuring the smooth flow of goods and meeting market demand. ROHM Semiconductor is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, ROHM Semiconductor builds trust with consumers and enhances the overall reputation of their products.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Unit Weight
Configuration
Id - Continuous Drain Current
Channel Mode
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

RT1A060APTR Documents

Download datasheets and manufacturer documentation for RT1A060APTR

Ersa RT1A060AP ~       TSMT8 TR Taping Spec      
Ersa TSST8 MOS Reliability Test      
Ersa TSST8S Inner Structure      
Ersa Transistor, MOSFET Flammability       TSST8 Part Marking      
Ersa RT1A060AP ~       TSMT8 TR Taping Spec      
Ersa RT1A060AP Spice Model      
Ersa TSST8-HF Constitution Material List       RT1A060AP ESD Data       Transistor Whisker Info       Transistor, MOSFET Level 1 MSL      

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