ROHM Semiconductor_RV3C002UNT2CL
original

ROHM Semiconductor
RV3C002UNT2CL

278-RV3C002UNT2CL
PDF Datasheet
MOSFET N-CH 20V 150MA VML0604
16 Weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
12
Maximum Gate Source Leakage Current (nA)
10000
Input Capacitance (Ciss) (Max) @ Vds
12 pF @ 10 V
Typical Rise Time (ns)
4
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
3
Show More

RV3C002UNT2CL Description

RV3C002UNT2CL Description

The RV3C002UNT2CL is a high-performance N-Channel MOSFET manufactured by ROHM Semiconductor. This device is designed for applications requiring low power dissipation and high input capacitance. With a maximum drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 150mA at 25°C, the RV3C002UNT2CL is suitable for a wide range of electronic devices.

RV3C002UNT2CL Features

  • Technology: MOSFET (Metal Oxide) - Provides excellent electrical characteristics and reliability.
  • Input Capacitance (Ciss): 12 pF @ 10 V - Minimizes input capacitance for faster switching speeds.
  • Drain to Source Voltage (Vdss): 20 V - Suitable for applications requiring high voltage handling.
  • Power Dissipation (Max): 100mW (Ta) - Low power dissipation for energy-efficient operation.
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 150mA, 4.5V - Ensures low on-resistance for minimal power loss.
  • Vgs (Max): ±10V - Supports a wide range of gate voltages for flexible design options.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) - Resistant to moisture, ensuring long-term reliability.
  • RoHS Status: ROHS3 Compliant - Environmentally friendly and suitable for global markets.
  • REACH Status: REACH Unaffected - Compliant with European chemical regulations.

RV3C002UNT2CL Applications

The RV3C002UNT2CL is ideal for various applications, including:

  1. Low-voltage power supplies: Due to its low power dissipation and high input capacitance.
  2. Audio amplifiers: Benefiting from its low on-resistance and high voltage handling capabilities.
  3. Automotive electronics: Withstanding harsh environments and providing reliable performance.
  4. Industrial control systems: Ensuring precise control and minimal power loss in high-voltage applications.

Conclusion of RV3C002UNT2CL

The RV3C002UNT2CL is a versatile N-Channel MOSFET from ROHM Semiconductor, offering a combination of high performance, low power dissipation, and compliance with environmental regulations. Its unique features make it an excellent choice for a wide range of applications, from low-voltage power supplies to automotive electronics. With its robust design and reliable performance, the RV3C002UNT2CL is a valuable addition to any electronic design.

FAQ

Does RV3C002UNT2CL have quantity-based pricing?
Yes. RV3C002UNT2CL currently has 3 pricing tier(s), starting from 1 units.
What package or case is RV3C002UNT2CL available in?
What operating temperature range does RV3C002UNT2CL support?
What is RV3C002UNT2CL?
Is RV3C002UNT2CL currently in stock?
Availability (In Stock : 44 )
Quantity Unit Price Ext. Price
1+ $0.21943 $0.22
10+ $0.21257 $2.13
30+ $0.20915 $6.27
ADD TO CART
QUICK ORDER
Unit Price $0.21943
Subtotal $0.22
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ