ROHM Semiconductor_UMB11NTN
original

ROHM Semiconductor
UMB11NTN

293-UMB11NTN
PDF Datasheet
TRANS PREBIAS DUAL PNP UMT6
13 Weeks

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Tech Specifications

Frequency - Transition
250MHz
Current - Collector (Ic) (Max)
100mA
Resistor - Base (R1)
10kOhms
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
50V
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UMB11NTN Description

UMB11NTN Description

The UMB11NTN is a high-performance, pre-biased dual PNP bipolar transistor array from ROHM Semiconductor. It is designed to provide excellent electrical characteristics and reliability in various applications. The UMB11NTN features a frequency transition of 250MHz, making it suitable for high-speed switching and amplification applications. It has a maximum collector current (Ic) of 100mA and a collector-emitter breakdown voltage of 50V, ensuring robust performance in demanding environments. The device is mounted on a surface mount package and is available in a UMT6 package.

UMB11NTN Features

  • 250MHz frequency transition for high-speed switching and amplification
  • 100mA maximum collector current (Ic) for efficient power handling
  • 50V collector-emitter breakdown voltage for reliable operation in demanding environments
  • Surface mount packaging for compact and efficient PCB layout
  • UMT6 package for easy integration into various designs
  • 10kOhms base resistor (R1) and emitter-base resistor (R2) for stable operation
  • 300mV maximum Vce saturation at 500µA and 10mA for low power consumption
  • 150mW maximum power dissipation for efficient operation
  • 20 minimum DC current gain (hFE) at 5mA and 5V for consistent performance
  • REACH unaffected status for compliance with environmental regulations
  • ROHS3 compliant for use in environmentally friendly applications
  • Moisture Sensitivity Level (MSL) 1 for unlimited storage time before reflow soldering

UMB11NTN Applications

The UMB11NTN is ideal for a wide range of applications, including:

  1. Audio and video signal processing circuits, where its high-frequency capabilities and low distortion make it suitable for audio amplifiers and filters.
  2. Power management circuits, where its ability to handle up to 100mA of collector current and 50V of collector-emitter breakdown voltage ensures reliable operation in power supply designs.
  3. Industrial control systems, where its robust performance and reliability are essential for maintaining stable operation in harsh environments.
  4. Consumer electronics, such as smartphones, tablets, and laptops, where its compact surface mount packaging and low power consumption make it an ideal choice for space-constrained designs.

Conclusion of UMB11NTN

The UMB11NTN from ROHM Semiconductor is a versatile and high-performance pre-biased dual PNP bipolar transistor array that offers excellent electrical characteristics and reliability. Its unique features, such as a 250MHz frequency transition, 100mA maximum collector current, and 50V collector-emitter breakdown voltage, make it an ideal choice for a wide range of applications, including audio and video signal processing, power management, industrial control systems, and consumer electronics. With its REACH unaffected status and ROHS3 compliance, the UMB11NTN is also an environmentally friendly option for designers looking to create eco-conscious products.

FAQ

What is the standard lead time for UMB11NTN?
The standard lead time for UMB11NTN is 13 Weeks.
Are there related or alternative parts for UMB11NTN?
What operating temperature range does UMB11NTN support?
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What is the mounting type of UMB11NTN?
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