ROHM Semiconductor_UMD3NTR
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ROHM Semiconductor
UMD3NTR

293-UMD3NTR
PDF Datasheet
TRANS NPN/PNP PREBIAS 0.15W UMT6
13 Weeks

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Tech Specifications

Configuration
Dual
PPAP
No
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
50V
Automotive
No
Typical Resistor Ratio
1
Supplier Package
UMT
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
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UMD3NTR Description

UMD3NTR Description

The UMD3NTR is a Bipolar Transistor Array manufactured by ROHM Semiconductor. This pre-biased NPN/PNP transistor array is designed for applications requiring high performance and reliability. It features a 250MHz transition frequency, a maximum collector current of 100mA, and a Vce saturation of 300mV at 10mA. The UMD3NTR is surface mountable and comes in a UMT6 package, making it suitable for a wide range of electronic devices.

UMD3NTR Features

  • High Frequency Performance: With a transition frequency of 250MHz, the UMD3NTR offers excellent high-frequency performance, making it ideal for applications such as radio frequency (RF) amplification and switching.
  • Low Saturation Voltage: The Vce saturation voltage of 300mV at 10mA ensures low power consumption and high efficiency in power amplification applications.
  • Pre-Biased Configuration: The pre-biased NPN/PNP configuration simplifies circuit design and reduces the need for external biasing components, saving space and cost.
  • High DC Current Gain: The minimum DC current gain (hFE) of 30 at 5mA and 5V provides excellent amplification capabilities.
  • Low Collector Cutoff Current: The maximum collector cutoff current of 500nA ensures low leakage and high reliability in low-power applications.
  • RoHS Compliance: The UMD3NTR is compliant with the RoHS3 directive, making it suitable for environmentally friendly electronics manufacturing.

UMD3NTR Applications

The UMD3NTR is ideal for a variety of applications due to its high performance and versatile features:

  1. RF Amplification: The high transition frequency and low saturation voltage make the UMD3NTR suitable for RF amplification in communication systems.
  2. Power Amplification: The low saturation voltage and high current gain make it ideal for power amplification applications, such as audio amplifiers and power supplies.
  3. Low-Power Applications: The low collector cutoff current and high reliability make the UMD3NTR suitable for low-power applications, such as battery-powered devices and IoT devices.
  4. Automotive Electronics: The UMD3NTR's performance and reliability make it suitable for automotive electronics, such as engine control units and infotainment systems.

Conclusion of UMD3NTR

The UMD3NTR is a high-performance, pre-biased NPN/PNP transistor array that offers excellent high-frequency performance, low power consumption, and versatility. Its unique features, such as the pre-biased configuration and RoHS compliance, make it an ideal choice for a wide range of applications, including RF amplification, power amplification, low-power applications, and automotive electronics. With its high reliability and performance, the UMD3NTR is a valuable addition to any electronics design.

FAQ

What is UMD3NTR?
UMD3NTR is a Bipolar Transistor Arrays, Pre-Biased from ROHM Semiconductor. This product page provides its main specifications, pricing information, availability, and inquiry options.
What is the standard lead time for UMD3NTR?
What operating temperature range does UMD3NTR support?
What voltage specification is listed for UMD3NTR?
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