ROHM Semiconductor_UMH10NTN
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ROHM Semiconductor
UMH10NTN

293-UMH10NTN
PDF Datasheet
TRANS 2NPN PREBIAS 0.15W UMT6
13 Weeks

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Tech Specifications

Frequency - Transition
250MHz
Current - Collector (Ic) (Max)
100mA
Resistor - Base (R1)
2.2kOhms
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
50V
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UMH10NTN Description

UMH10NTN Description

The UMH10NTN is a Bipolar Transistor Array from ROHM Semiconductor, designed for applications that require a pre-biased 2NPN transistor pair. This surface-mount device is active and offers a range of technical specifications that make it suitable for various electronic systems. The UMH10NTN is compliant with the latest environmental regulations, including ROHS3 and REACH, ensuring its use in a wide range of industries.

UMH10NTN Features

  • Technical Specifications:

    • Frequency - Transition: 250MHz, ensuring high-speed operation.
    • Current - Collector (Ic) (Max): 100mA, providing ample current for most applications.
    • Resistor - Base (R1): 2.2kOhms, and Resistor - Emitter Base (R2): 47kOhms, for precise biasing.
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, indicating low power consumption in saturation.
    • Voltage - Collector Emitter Breakdown (Max): 50V, suitable for applications with high voltage requirements.
    • Power - Max: 150mW, allowing for operation in power-sensitive environments.
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, ensuring consistent performance.
    • Moisture Sensitivity Level (MSL): 1 (Unlimited), making it suitable for harsh environments.
  • Unique Features and Advantages:

    • The UMH10NTN stands out with its high transition frequency and low saturation voltage, which are crucial for high-speed, low-power applications.
    • The device's compliance with ROHS3 and REACH regulations makes it an environmentally friendly choice.
    • The pre-biased design simplifies the circuit design process, reducing the need for external biasing components.

UMH10NTN Applications

The UMH10NTN is ideal for applications where high speed and low power consumption are critical. Some specific use cases include:

  • Audio Amplifiers: Utilizing the device's high gain and low distortion characteristics.
  • Communication Systems: Benefiting from the high transition frequency for signal processing.
  • Automotive Electronics: Relying on the device's robustness and compliance with environmental standards.
  • Industrial Control Systems: Employing the device in circuits that require high reliability and stability.

Conclusion of UMH10NTN

The UMH10NTN from ROHM Semiconductor is a high-performance Bipolar Transistor Array that offers a combination of speed, power efficiency, and environmental compliance. Its pre-biased design and robust technical specifications make it a versatile choice for a wide range of applications in the electronics industry. With its unique features and advantages, the UMH10NTN is poised to deliver reliable performance in demanding electronic systems.

FAQ

Are there related or alternative parts for UMH10NTN?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What voltage specification is listed for UMH10NTN?
What operating temperature range does UMH10NTN support?
What is UMH10NTN?
What is the mounting type of UMH10NTN?
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