ROHM Semiconductor_UMH2NTN
original

ROHM Semiconductor
UMH2NTN

293-UMH2NTN
PDF Datasheet
TRANS 2NPN PREBIAS 0.15W UMT6
13 Weeks

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Tech Specifications

Configuration
Dual
PPAP
No
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
50V
Automotive
No
Typical Resistor Ratio
1
Supplier Package
UMT
Transistor Type
2 NPN - Pre-Biased (Dual)
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UMH2NTN Description

UMH2NTN Description

The UMH2NTN is a Bipolar Transistor Array from ROHM Semiconductor, featuring two NPN transistors with pre-biasing capabilities. This Surface Mount device is designed for applications requiring low power and high frequency performance. With a maximum collector-emitter breakdown voltage of 50V and a maximum power dissipation of 150mW, the UMH2NTN is suitable for various electronic circuits.

UMH2NTN Features

  • Technical Specifications:

    • Frequency - Transition: 250MHz
    • Current - Collector (Ic) (Max): 100mA
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
    • Power - Max: 150mW
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • Current - Collector Cutoff (Max): 500nA
  • Performance Benefits:

    • High frequency capability up to 250MHz
    • Low saturation voltage for improved efficiency
    • Low cutoff current for reduced power consumption
    • Pre-biasing for simplified circuit design
  • Unique Features and Advantages:

    • Surface Mount technology for compact design and ease of integration
    • Active product status with ongoing support from ROHM Semiconductor
    • REACH Unaffected and ROHS3 compliant for environmental sustainability

UMH2NTN Applications

The UMH2NTN is ideal for various applications where low power and high frequency performance are required. Some specific use cases include:

  • Audio Amplifiers: Utilize the UMH2NTN's high frequency and low power capabilities for efficient audio signal amplification.
  • RF Circuits: Leverage the device's 250MHz transition frequency for radio frequency applications.
  • Low Power Electronics: Employ the UMH2NTN in battery-operated devices to minimize power consumption.
  • Automotive Electronics: Use the device in automotive control systems where reliability and performance are critical.

Conclusion of UMH2NTN

The UMH2NTN from ROHM Semiconductor is a versatile Bipolar Transistor Array with pre-biasing capabilities. Its high frequency performance, low power consumption, and compact Surface Mount design make it suitable for a wide range of applications. With ongoing support from the manufacturer and compliance with environmental regulations, the UMH2NTN is a reliable choice for electronic circuit design.

FAQ

What is the mounting type of UMH2NTN?
UMH2NTN uses a Surface Mount mounting style based on the listed product specifications.
What is UMH2NTN?
Are there related or alternative parts for UMH2NTN?
What is the standard lead time for UMH2NTN?
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