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UMH9NTN

UMH9NTN Description

The UMH9NTN is a Bipolar Transistor Array from ROHM Semiconductor, designed for pre-biased applications. This 2NPN prebiased transistor is housed in a UMT6 package, making it suitable for surface mount applications. With a frequency transition of 250MHz, it offers excellent performance in high-speed applications. The UMH9NTN is designed to operate with a maximum collector current of 100mA and a collector-emitter breakdown voltage of 50V. It is also capable of handling a maximum power dissipation of 150mW.

UMH9NTN Features

• High Frequency Performance: With a frequency transition of 250MHz, the UMH9NTN is ideal for high-speed applications.
• Low Saturation Voltage: The Vce saturation voltage is only 300mV at 250µA and 5mA, ensuring low power consumption in saturated conditions.
• Low Collector Cutoff Current: The maximum collector cutoff current is 500nA, making it suitable for low-power applications.
• RoHS Compliance: The UMH9NTN is compliant with the RoHS3 directive, making it suitable for environmentally friendly applications.
• Low Moisture Sensitivity: With a moisture sensitivity level of 1, the UMH9NTN can be stored and handled without special precautions.
• Pre-biased Design: The pre-biased design simplifies the circuit design and reduces the number of external components required.

UMH9NTN Applications

The UMH9NTN is ideal for a variety of applications, including:

• Audio Amplifiers: Its low saturation voltage and high frequency performance make it suitable for audio amplifier applications.
• RF Applications: The high frequency transition and low collector cutoff current make it suitable for RF applications, such as mixers and modulators.
• Low-Power Circuits: The low collector cutoff current and low saturation voltage make it suitable for low-power applications.
• Automotive Applications: The UMH9NTN can be used in automotive applications, such as audio systems and control circuits, due to its low power consumption and high reliability.

Conclusion of UMH9NTN

The UMH9NTN is a versatile Bipolar Transistor Array from ROHM Semiconductor, offering high frequency performance, low power consumption, and compliance with environmental regulations. Its pre-biased design simplifies circuit design and reduces the number of external components required. With its wide range of applications, the UMH9NTN is an excellent choice for high-speed, low-power, and environmentally friendly applications.