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FDD3510H
289-FDD3510H
PDF Datasheet
Dual N/P-Ch MOSFET, 80V, 2.8A, 80mR, TO-252-5, SMT
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Tech Specifications
Package/Case
TO-252-5
Continuous Drain Current (ID)
2.8A
Drain to Source Breakdown Voltage
80V
Drain to Source Resistance
80mR
Drain to Source Voltage (Vdss)
80V
Drain-source On Resistance-Max
80MR
Fall Time
5ns
FET Type
N and P-Channel
FDD3510H Description
Mosfet Array 80V 4.3A, 2.8A 1.3W Surface Mount TO-252 (DPAK)
FAQ
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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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