onsemi

FDC8602  

FET, MOSFET Arrays

FDC8602 Description

The FDC8602 is a high-performance MOSFET (Metal Oxide) from onsemi, designed for use in a variety of electronic applications. This device features a 2N-channel configuration, with a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 1.2A at 25°C. The FDC8602 is manufactured using onsemi's advanced PowerTrench® technology, which provides superior performance and reliability compared to traditional planar MOSFETs.

FDC8602 Features

• Input Capacitance (Ciss): The FDC8602 has a maximum input capacitance of 70pF at a drain-source voltage (Vds) of 50V. This low capacitance helps to minimize switching losses and improve overall efficiency.
• Gate Charge (Qg): With a maximum gate charge of 2nC at a gate-source voltage (Vgs) of 10V, the FDC8602 offers fast switching performance and low gate drive power requirements.
• Rds On (Max): The device has a maximum on-resistance (Rds On) of 350mOhm at a drain current (Id) of 1.2A and a gate-source voltage (Vgs) of 10V. This low resistance contributes to high efficiency and low power dissipation in switching applications.
• Vgs(th) (Max): The FDC8602 has a maximum threshold voltage (Vgs(th)) of 4V at a drain current (Id) of 250µA. This ensures reliable operation across a wide range of input voltages.
• Power - Max: The device can handle a maximum power dissipation of 690mW, making it suitable for a variety of high-power applications.
• Mounting Type: The FDC8602 is available in a surface-mount package, which allows for compact and efficient PCB layouts.
• RoHS Status: The device is compliant with the RoHS3 directive, making it suitable for use in environmentally friendly applications.

FDC8602 Applications

The FDC8602 is ideal for use in a variety of applications where high performance, reliability, and efficiency are critical. Some specific use cases include:

1. Power Management: The FDC8602's low on-resistance and high drain-source voltage make it well-suited for use in power management circuits, such as voltage regulators and DC-DC converters.
2. Motor Control: The device's ability to handle high drain currents and voltages makes it an excellent choice for motor control applications, including brushless DC motors and stepper motors.
3. Automotive: The FDC8602's robust performance and reliability make it suitable for use in automotive applications, such as electric power steering and electric vehicle charging systems.
4. Industrial Control: The device's high power dissipation and low on-resistance make it ideal for use in industrial control applications, such as variable frequency drives and motor controllers.

Conclusion of FDC8602

In conclusion, the FDC8602 is a high-performance MOSFET from onsemi that offers a combination of low on-resistance, high drain-source voltage, and fast switching performance. Its advanced PowerTrench® technology and surface-mount package make it an ideal choice for a wide range of applications, including power management, motor control, automotive, and industrial control. With its RoHS3 compliance and low input capacitance, the FDC8602 is a reliable and efficient solution for demanding electronic systems.

FDC8602 Documents

Download datasheets and manufacturer documentation for FDC8602

PCN Assembly/Origin :

Mult Dev Assembly 23/Apr/2020      

Datasheets :

FDC8602      

PCN Packaging :

Mult Devices 24/Oct/2017       Binary Year Code Marking 15/Jan/2014      

PCN Design/Specification :

Marking Lay-out Implementation 15/Nov/2021       Marking Lay-out Implementation 07/Oct/2022      

Environmental Information :

onsemi RoHS       Material Declaration FDC8602