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SAMSUNG
K4A4G085WE-BCPB
774-K4A4G085WE-BCPB
PDF Datasheet
DRAM Chip DDR4 SDRAM 4Gbit 512Mx8 1.2V 78-Pin FBGA
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Tech Specifications
Organization
512Mx8
PCB changed
78
HTS
8542.32.00.36
ECCN (US)
EAR99
PPAP
No
Data Bus Width (bit)
8
Operating Current (mA)
84
Number of Internal Banks
16
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K4A4G085WE-BCPB Description
K4A4G085WE-BCPB NRND / LTB
4Gb E-die DDR4 SDRAM · 512M × 8 bits · 78-ball FBGA · 1.2V · DDR4-2133 (15‑15‑15)
Samsung Semiconductor | Lead‑free & Halogen‑free, RoHS compliant
📄 1. Product Overview
K4A4G085WE-BCPB is a 4‑gigabit (4Gb) Double Data Rate 4 Synchronous DRAM manufactured by Samsung Semiconductor. The device belongs to the DDR4 E‑die family and is internally organized as 512M × 8 bits (512 million words × 8 bits). The “BCPB” suffix designates the DDR4‑2133 speed grade (15‑15‑15). Packaged in a standard 78‑ball FBGA (7.5 × 13.3 mm), it operates from a 1.2V nominal supply and is intended for high‑performance computing, servers, and consumer electronics.
🔹 Core Highlights
- ▸ Density: 4 Gbit (512 MByte)
- ▸ Organization: 512M x8 (16 internal banks)
- ▸ Max data rate: 2133 Mbps per pin (DDR4‑2133)
- ▸ CAS Latency: 15 (programmable: 11–15)
- ▸ Supply voltage VDD/VDDQ = 1.2V ± 0.06V
- ▸ Commercial temperature: 0°C to +85°C
- ▸ POD I/O, ODT, ZQ calibration
🔹 Package & Physical
- ▸ 78‑ball FBGA (Fine‑Pitch BGA)
- ▸ Ball pitch: 0.8 mm
- ▸ Dimensions: 7.5 mm × 13.3 mm
- ▸ RoHS compliant / Lead‑free & Halogen‑free
- ▸ Surface mount (SMD)
- ▸ Standard tray packing (1280 pcs/tray)
⚙️ 2. Technical Specifications
Performance & Core
| Memory Type | DDR4 SDRAM |
| Density | 4 Gbit (512 MB) |
| Organization | 512M × 8 bits (x8) |
| Number of Banks | 16 banks (2 bank groups) |
| Max Clock Frequency | 1066 MHz |
| Max Data Rate | 2133 Mbps per pin (PC4-17000) |
| CAS Latency (CL) | 15 (programmable down to 11) |
| tRCD / tRP / tRAS | 15 / 15 / 35 (for 2133) |
| Access Time (tAC) | 0.18 ns (max) |
Power & Environment
| Supply Voltage | 1.2V (1.14V – 1.26V) |
| Operating Current | 84 mA (max) |
| Standby Current | ≈ 30 mA (typ) |
| Operating Temperature | 0°C to +85°C (case) |
| Refresh Period (≤85°C) | 7.8 µs |
| RoHS / Halogen Free | Yes |
| ECCN | EAR99 |
Part Number Decoder (K4A4G085WE-BCPB)
K → Samsung memory prefix
4 → DRAM product
A → DDR4 SDRAM
4G → Density: 4 Gigabits (512 MB) — NOT 4 GB
08 → Data bus width: 8 bits (x8 organization)
5 → Refresh / internal configuration code
W → Operating voltage: 1.2V (standard DDR4)
E → Die revision: E‑die (fifth generation DDR4 die)
-BCPB → Speed suffix: DDR4-2133 (15-15-15)
4 → DRAM product
A → DDR4 SDRAM
4G → Density: 4 Gigabits (512 MB) — NOT 4 GB
08 → Data bus width: 8 bits (x8 organization)
5 → Refresh / internal configuration code
W → Operating voltage: 1.2V (standard DDR4)
E → Die revision: E‑die (fifth generation DDR4 die)
-BCPB → Speed suffix: DDR4-2133 (15-15-15)
⚠️ Important: “4G” denotes 4 gigabits = 512 MB. Misinterpreting as 4 gigabytes leads to incorrect system memory calculations.
🧠 3. Memory Architecture & Advanced Features
🏛️ Core Architecture
- ▸ 16 internal banks (two bank groups of eight banks)
- ▸ 8‑bit pre‑fetch architecture — fundamental DDR4 feature
- ▸ 512M × 8 organization – 512 million addressable locations
- ▸ Programmable CAS Latency (11–15) and CAS Write Latency (CWL)
- ▸ Burst length: BL8 (default), BC4 or BL4 for burst chop
⚡ Advanced DDR4 Features
- ▸ POD (Pseudo Open Drain) I/O – lower power vs SSTL
- ▸ On-Die Termination (ODT) – programmable termination
- ▸ ZQ Calibration – internal self‑calibration (RZQ = 240Ω)
- ▸ Data Mask (DM) for partial writes
- ▸ DLL, Write Leveling, Multi‑Purpose Register (MPR)
- ▸ Auto Precharge, Auto Refresh, Self‑Refresh, TCSR
🕒 4. DDR4-2133 Speed Grade (BCPB) – Timing Parameters
DDR4-2133 (15‑15‑15) Configuration
| Clock Frequency (fCK) | 1066 MHz |
| Clock Cycle Time (tCK) | 0.938 ns |
| CAS Latency (CL) | 15 clocks |
| RAS to CAS Delay (tRCD) | 15 clocks |
| Row Precharge (tRP) | 15 clocks |
| CAS Write Latency (CWL) | 10 clocks |
| Access Time (tAC) | 0.18 ns (max) |
The device also supports lower speed grades (DDR4‑1600, DDR4‑1866) with relaxed timings.
💼 5. Target Applications
- ▸ Servers and data centres (cloud, virtualization)
- ▸ Desktop & laptop PCs (system memory)
- ▸ Telecom & networking – 5G base stations, routers
- ▸ Industrial automation – PLCs, robotics, HMI
- ▸ Consumer electronics – smart TVs, set‑top boxes, gaming
- ▸ Medical devices – diagnostic imaging, monitors
- ▸ Automotive infotainment and navigation
- ▸ Embedded computing / single‑board computers
- ▸ AI/ML acceleration (inference, edge computing)
- ▸ Memory modules (8GB dual‑rank, 4GB single‑rank DIMMs)
🚨 6. Product Lifecycle – NRND / Last‑Time‑Buy (LTB)
⚠️ End‑of‑Life Notice: The K4A4G085WE-BCPB has been designated NRND (Not Recommended for New Designs) and LTB (Last Time Buy) by Samsung. This 4Gb E‑die DDR4 component is approaching its End‑of‑Life phase.
🔴 Status Summary
- ▸ Part Status: NRND / LTB
- ▸ Not recommended for new designs
- ▸ Long‑term supply not guaranteed
- ▸ Last‑time‑buy windows closing
🔄 Recommended Alternatives (Active)
- ▸ Samsung K4A8G165WB‑BCTD (8Gb)
- ▸ Samsung K4AAG165WA‑BCTD (16Gb)
- ▸ Samsung K4A4G085WF‑BCTD (4Gb, F‑die)
- ▸ Micron MT41K512M8RH‑125
- ▸ SK Hynix H5AN4G8NBJR‑UHC
📌 For new projects, select active DDR4 components (e.g., K4A8G165WB, K4AAG165WA) or migrate to DDR5. Existing designs should qualify drop‑in replacements.
🌿 7. Environmental & Regulatory Compliance
✅ Certifications
- ▸ RoHS3 (2015/863/EU) compliant
- ▸ Halogen‑free (IEC 61249-2-21)
- ▸ Lead‑free / Pb‑free
- ▸ REACH compliant (SVHC free)
- ▸ Conflict mineral statement (DRC conflict‑free)
📦 Ordering & Package
- ▸ 78‑ball FBGA (7.5×13.3 mm, 0.8 mm pitch)
- ▸ Tray packing: 1,280 pieces per tray
- ▸ Moisture Sensitivity Level: MSL 3
- ▸ JEDEC standard compatible
- ▸ HTS Code: 8542.32.00.36
FAQ
What is the K4A4G085WE-BCPB?
A: The K4A4G085WE-BCPB is a 4‑gigabit (4Gb) Double Data Rate 4 (DDR4) Synchronous DRAM manufactured by Samsung Semiconductor. It belongs to Samsung's DDR4 E‑die generation. The device is internally organized as 512M × 8 bits (512 million words × 8 bits) and is housed in a compact 78‑ball FBGA (Fine‑Pitch Ball Grid Array) package. It is designed for high‑performance computing applications requiring high bandwidth and low power, operating from a standard DDR4 supply voltage of 1.2V (range: 1.14V to 1.26V), and is rated for a commercial temperature range of 0°C to 85°C .
What are the key technical features and specifications?
A: The K4A4G085WE-BCPB is optimized for high‑speed, energy‑efficient memory systems. Key specifications include a 4Gb density (512 MB) organized as 512M × 8, a data bus width of 8 bits, and a high‑speed POD (Pseudo Open Drain) interface typical of DDR4 technology. The device features 16 internal memory banks (32M words per bank). It supports a maximum clock rate of 2133 MHz (or higher depending on configuration), with a maximum access time of 0.18 ns (180 ps). The device operates within a supply range of 1.14V to 1.26V and typically draws 84 mA of operating current. The package is an RoHS‑compliant, surface‑mount 78‑pin FBGA with a 0.8 mm ball pitch .
What does the part number K4A4G085WE-BCPB mean?
A: The part number follows Samsung's standard memory device naming convention, which provides detailed configuration information:
Part Number Field Meaning
K Samsung Semiconductor memory product prefix
4 Product type: DRAM
A DRAM sub‑type: DDR4 SDRAM
4G Density: 4 Gigabits (4 Gb = 512 MB)
08 Data bus width: 8 bits (x8 organization)
5 Refresh architecture / internal configuration code
W Operating voltage: 1.2V (standard DDR4 voltage)
E Die revision: E‑die (fifth generation DDR4 die)
‑‑‑‑ Separator
B Speed bin group: DDR4‑2133 / DDR4‑2400 speed group
CPB Specific speed grade suffix: BCPB indicates DDR4‑2133 (15‑15‑15) or compatible speed grade
The "4G" in the part number indicates 4 gigabits of memory—not 4 gigabytes. A single chip provides exactly 512 MB of storage, which is one‑eighth of 4 GB. This distinction is crucial for calculating the correct number of chips required on a PCB to achieve a target system memory capacity.
What is the maximum data rate of this device?
A: The K4A4G085WE-BCPB is a DDR4 SDRAM component that operates at multiple speed grades depending on the system configuration and memory controller settings. The most consistent specification across reliable data sources indicates a maximum data rate of 2133 Mbps (PC4‑17000) per pin. This is supported by several authoritative distributor references confirming the 2133 Mbps rate and a 0.18 ns access time . However, some third‑party sources list higher speed grades such as 3200 Mbps, 4267 Mbps, or mention operation in DDR4‑2400 memory modules . Engineering caution is required: the exact maximum data rate should always be verified against the current official Samsung datasheet. The inconsistencies reflect that this component may be used in different memory module configurations with varying speed bins, or the BCPB suffix may cover a family of speed grades within the DDR4‑2133 to DDR4‑2400 range. For the most accurate specification for a specific design, consult the Samsung datasheet revision 1.6 (73 pages total) or contact Samsung directly .
What is the lifecycle status of the K4A4G085WE-BCPB, and what applications is it intended for?
A: The K4A4G085WE-BCPB is a commercial DDR4 SDRAM component that has been in mass production for several years. The part status varies across distributor databases:
LCSC (Shenzhen) lists the part status as Mass Production
AVA Q (UK) lists the part status as NRND (Not Recommended for New Designs) and LTB (Last Time Buy)
JLCSMT lists the stock status as 0 pieces
Based on the manufacturer's official part number structure, this is an older 4Gb E‑die DDR4 component that is likely approaching its End‑of‑Life (EOL). New designs should consider more current DDR4 or DDR5 alternatives for long‑term supply assurance. The device is intended for a wide range of high‑performance computing applications, including personal computers and laptops, servers and data centers, networking and telecommunications equipment, industrial automation systems, and consumer electronics such as gaming consoles and smart TVs .
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