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SAMSUNG

K4AAG165WA-BCTD

Name: K4AAG165WA-BCTD
Brand: SAMSUNG
SKU: 774-K4AAG165WA-BCTD

Manufacturer:

SAMSUNG

ERSA Part #:

774-K4AAG165WA-BCTD

Datasheet:

PDF Datasheet

Description:

DRAM Chip DDR4 SDRAM 16Gbit 1Gx16 1.2V 96-Pin FBGA

RoHS Status:

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Tech Specifications

Organization

1Gx16

PCB changed

HTS

8542.32.00.36

ECCN (US)

EAR99

PPAP

Data Bus Width (bit)

Number of Internal Banks

Automotive

K4AAG165WA-BCTD Description

K4AAG165WA-BCTD Active / Mass Production

16Gb A‑die DDR4 SDRAM · 1G × 16 bits · 96‑ball FBGA · 1.2V · DDR4‑3200 (22‑22‑22)

Samsung Semiconductor | Lead‑free & Halogen‑free, RoHS compliant

📄 1. Product Overview

K4AAG165WA-BCTD is a 16‑gigabit (16Gb) Double Data Rate 4 Synchronous DRAM manufactured by Samsung Semiconductor, belonging to the DDR4 A‑die family. It is internally organized as 1G × 16 bits (1024 million words × 16 bits). The “BCTD” suffix designates the DDR4‑3200 speed grade (22‑22‑22). Packaged in a standard 96‑ball FBGA (Fine‑Pitch Ball Grid Array) measuring 7.5 × 13.3 mm, it operates from a 1.2V nominal supply and is intended for high‑density, high‑performance computing applications such as servers, data centers, and advanced embedded systems.

🔹 Core Highlights

▸ Density: 16 Gbit (2 GByte)
▸ Organization: 1G × 16 bits
▸ Max data rate: 3200 Mbps per pin (DDR4‑3200)
▸ CAS Latency: 22 (programmable)
▸ Supply voltage VDD/VDDQ = 1.2V ± 0.06V
▸ Commercial temperature: 0°C to +95°C
▸ 16 internal banks (4 bank groups), 8‑bit pre‑fetch

🔹 Package & Physical

▸ 96‑ball FBGA (Fine‑Pitch BGA)
▸ Ball pitch: 0.8 mm
▸ Dimensions: 7.5 mm × 13.3 mm
▸ RoHS compliant / Lead‑free & Halogen‑free
▸ Surface mount (SMD)
▸ Standard tray packing (1280 units per tray)

⚙️ 2. Technical Specifications

Performance & Core

Memory Type	DDR4 SDRAM
Density	16 Gbit (2 GByte)
Organization	1G × 16 bits (x16)
Number of Banks	16 banks (4 bank groups of 4)
Max Clock Frequency	1600 MHz (effective 3200 Mbps)
Max Data Rate	3200 Mbps per pin (PC4‑25600 / DDR4‑3200)
CAS Latency (CL)	22 (programmable down to 11)
tRCD / tRP / tRAS	22 / 22 / 22 (at DDR4‑3200)
Access Time (tAC)	0.17 ns (max)

Power & Environment

Supply Voltage (VDD/VDDQ)	1.2V (1.14V – 1.26V)
Operating Current (IDD)	210 mA (max)
Standby Current	≈ 35 mA (typ)
Operating Temperature	0°C to +95°C (case)
Refresh Period (≤85°C)	7.8 µs
Refresh Period (85°C–95°C)	3.9 µs
RoHS / Halogen Free	Yes
ECCN	EAR99

Part Number Decoder (K4AAG165WA-BCTD)

K → Samsung memory prefix
4 → DRAM product
A → DDR4 SDRAM
AAG → Density: 16 Gb (16 Gigabits = 2 GB)
16 → Data bus width: 16 bits (x16 organization)
5 → Refresh / internal configuration code
W → Operating voltage: 1.2V (standard DDR4)
A → Die revision: A‑die (first generation DDR4 die)
-BCTD → Speed suffix: DDR4‑3200 (22-22-22) for PC4‑25600 modules

⚠️ Important: “AAG” denotes 16 gigabits = 2 GB. Misinterpreting as 16 gigabytes leads to incorrect system memory calculations.

🧠 3. Memory Architecture & Advanced Features

🏛️ Core Architecture

▸ 16 internal banks (organised as 4 bank groups of 4 banks) enabling high concurrency
▸ 8‑bit pre‑fetch architecture — fundamental DDR4 characteristic
▸ 1G × 16 organization – 1,073,741,824 addressable locations each storing 16 bits
▸ Programmable CAS Latency (posted CAS) and CAS Write Latency (CWL)
▸ Burst length: BL8 (default), BC4 or BL4 for burst chop

⚡ Advanced DDR4 Features

▸ POD (Pseudo Open Drain) I/O – lower power vs SSTL
▸ On‑Die Termination (ODT) – programmable termination for signal integrity
▸ ZQ Calibration – internal self‑calibration using external resistor RZQ = 240 Ω
▸ CRC (Cyclic Redundancy Check) for command/address bus – improves reliability
▸ Error‑Correcting Code (ECC) support – onboard error detection and correction
▸ Data Mask (DM) for partial writes
▸ DLL, Write Leveling, Multi‑Purpose Register (MPR)
▸ Auto Precharge, Auto Refresh, Self‑Refresh, TCSR

🕒 4. DDR4‑3200 Speed Grade (BCTD) – Timing Parameters

DDR4‑3200 (22‑22‑22) Configuration

Clock Frequency (fCK)	1600 MHz
Clock Cycle Time (tCK)	0.625 ns
CAS Latency (CL)	22 clocks
RAS to CAS Delay (tRCD)	22 clocks
Row Precharge (tRP)	22 clocks
RAS Active (tRAS)	32 ns (min)
CAS Write Latency (CWL)	14 clocks
Access Time (tAC)	0.17 ns (max)

The device also supports lower speed grades (DDR4‑2133, DDR4‑2400, DDR4‑2666) with relaxed timings, configurable via mode registers.

💼 5. Target Applications

▸ Servers and data centres (high‑density DIMMs, cloud computing)
▸ Artificial intelligence & machine learning (model training, inference)
▸ 5G telecommunications infrastructure (base stations, routers)
▸ Automotive infotainment and advanced driver assistance systems (ADAS)
▸ High‑end desktop and workstation PCs

▸ Industrial automation and embedded systems (PLCs, robotics)
▸ Networking equipment (switches, load balancers)
▸ Medical imaging and diagnostic equipment
▸ Consumer electronics (smart TVs, set‑top boxes, gaming consoles)
▸ Memory modules – 32GB DIMMs / SODIMMs (using 16 chips)

🚨 6. Product Lifecycle – Active Production

✅ Active / Mass Production Status: The K4AAG165WA-BCTD is currently in active mass production according to multiple distributor sources (LCSC, JLCSMT, AVAQ). Samsung continues to manufacture this 16Gb A‑die DDR4 component for commercial and industrial applications. However, availability may vary by region, and designers are encouraged to check current lead times with authorized distributors.

🔵 Status Summary

▸ Part Status: Active / Mass Production
▸ Recommended for new designs (check availability)
▸ Long‑term supply currently stable
▸ No Last‑Time‑Buy announced at this time

🔄 Alternative Devices (Same Family)

▸ Samsung K4AAG165WB‑BCTD (newer die revision)
▸ Samsung K4A8G165WC‑BCTD (8Gb, lower density)
▸ Micron MT40A2G16RC‑062E (16Gb DDR4)
▸ SK Hynix H5ANAG6NCJR‑UHC (16Gb DDR4)

📌 For new projects, K4AAG165WA-BCTD is a viable, active component. For the longest possible supply longevity, consider using the latest die revision (e.g., K4AAG165WB) if available.

🌿 7. Environmental & Regulatory Compliance

✅ Certifications

▸ RoHS3 (2015/863/EU) compliant
▸ Halogen‑free (IEC 61249-2-21)
▸ Lead‑free / Pb‑free
▸ REACH compliant (SVHC free)
▸ Conflict mineral statement (DRC conflict‑free)

📦 Ordering & Package

▸ 96‑ball FBGA (7.5×13.3 mm, 0.8 mm pitch)
▸ Tray packing: 1280 units per tray (standard)
▸ Moisture Sensitivity Level: MSL 3
▸ JEDEC standard compatible
▸ HTS Code: 8542.32.00.36

FAQ

A: The K4AAG165WA‑BCTD's 16Gb capacity, high data rates, and wide operating temperature range make it well‑suited for a broad range of applications. Typical use cases include servers and data centres, where it caches large datasets for fast retrieval and high throughput; artificial intelligence (AI) and machine learning applications, where its high speed accelerates data transfer between memory and processors during model training and inference; 5G and telecommunications equipment, where it assists in fast packet processing; industrial automation and embedded systems; and consumer electronics such as laptops, tablets, and smart TVs. According to distributor lifecycle records, the product status is listed as "Mass Production" or "Active" by multiple sources, indicating ongoing active manufacturing and stable supply for commercial applications. RoHS compliant (Lead‑Free & Halogen‑Free), the device is available in tray packaging with a standard pack quantity of 128 or 1280 units.