The SD1477 from STMicroelectronics is a high-performance NPN RF bipolar transistor designed for demanding RF applications. Packaged in the M111 surface-mount form factor, it offers a collector-emitter breakdown voltage (VCE) of 18V and a maximum collector current (IC) of 20A, making it suitable for high-power RF amplification. With a power dissipation capability of 270W and an operating temperature range up to 200°C (TJ), this transistor ensures reliability in harsh environments. Its DC current gain (hFE) of 10 @ 5A, 5V and 6dB gain highlight its efficiency in signal amplification.
The SD1477 excels in RF power amplification, particularly in:
The SD1477 NPN RF transistor is a high-reliability solution for power RF amplification, combining high current handling, thermal stability, and compact packaging. Its obsolete status may limit new designs, but its performance makes it a strong candidate for legacy or specialized systems requiring robust RF transistors. Engineers should evaluate alternatives for future-proofing while leveraging SD1477’s strengths in high-power, high-frequency applications.
Download datasheets and manufacturer documentation for SD1477