The SD1728 from STMicroelectronics is a high-performance NPN RF bipolar transistor designed for demanding RF amplification applications. Packaged in the M177 surface-mount case, it offers a robust 55V collector-emitter breakdown voltage (VCE), a 40A maximum collector current (IC), and an impressive 330W power dissipation capability. With a DC current gain (hFE) of 23 @ 10A, 6V and a gain range of 15dB–17dB, this transistor excels in high-power RF amplification while maintaining efficiency. Its 200°C maximum junction temperature (TJ) ensures reliable operation under thermal stress.
The SD1728 is tailored for RF power amplification in:
The SD1728 stands out as a high-power RF transistor with exceptional thermal and electrical performance, making it ideal for high-frequency, high-power amplification. Its M177 package and 55V/40A ratings provide a balance of power and efficiency, while its obsolete status suggests suitability for legacy system maintenance rather than new designs. Engineers seeking a reliable, high-gain NPN transistor for RF applications will find the SD1728 a compelling choice, particularly in environments demanding thermal resilience and consistent RF output.
Download datasheets and manufacturer documentation for SD1728