The SH32N65DM6AG from STMicroelectronics is a high-performance N-channel 650V MOSFET designed for demanding power electronics applications. Built using advanced ECOPACK® technology, it delivers 32A continuous drain current (Id) at 25°C, with a low on-resistance (Rds(on)) of 97mΩ at 10V gate drive, ensuring efficient power handling and minimal conduction losses. Its 650V drain-to-source voltage (Vdss) rating makes it suitable for high-voltage switching applications, while the 208W maximum power dissipation (Tc) ensures robust thermal performance. Packaged in a 9ACEPACK surface-mount format with Tape & Reel (TR), it is optimized for automated assembly and complies with ROHS3 and REACH environmental standards.
The SH32N65DM6AG combines high voltage capability, low conduction losses, and fast switching in a compact, automation-friendly package. Its 97mΩ Rds(on), 47nC Qg, and 650V rating position it as a superior choice for industrial, automotive, and renewable energy applications where efficiency and reliability are critical. STMicroelectronics’ ECOPACK® technology further ensures compliance with environmental regulations, making it a future-proof solution for next-gen power systems.
Download datasheets and manufacturer documentation for SH32N65DM6AG