STMicroelectronics_STS4DNF60L

STMicroelectronics
STS4DNF60L  
FET, MOSFET Arrays

STMicroelectronics
STS4DNF60L
289-STS4DNF60L
MOSFET 2N-CH 60V 4A 8SOIC
In Stock : 3486

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STS4DNF60L Description

The STS4DNF60L is a 600V N-channel MOSFET from STMicroelectronics. It is designed for use in a variety of applications, including motor control, power supplies, and automotive systems.

Description:

The STS4DNF60L is a high-power, high-voltage MOSFET that features a low on-resistance and fast switching capabilities. It is available in a TO-220F package, which is suitable for use in a variety of power electronic applications.

Features:

  • 600V blocking voltage
  • Low on-resistance (RDS(on))
  • Fast switching capabilities
  • High input impedance
  • Low gate charge
  • Avalanche energy handling capability
  • Suitable for use in a wide range of applications

Applications:

The STS4DNF60L is suitable for use in a variety of applications, including:

  • Motor control
  • Power supplies
  • Automotive systems
  • Industrial control
  • Battery management systems
  • Renewable energy systems

Overall, the STS4DNF60L is a high-performance MOSFET that offers excellent electrical characteristics and is suitable for use in a wide range of power electronic applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
Package Length
Series
Power - Max
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STS4DNF60L Documents

Download datasheets and manufacturer documentation for STS4DNF60L

Ersa Mult Dev Assembly Chg 18/Oct/2019      
Ersa STS4DNF60L      
Ersa Box Label Chg 28/Jul/2016      
Ersa STS4DNF60L View All Specifications      
Ersa STS4DNF60L      

Shopping Guide

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