The ST13009 from STMicroelectronics is a high-performance NPN bipolar junction transistor (BJT) designed for demanding power-switching applications. Encased in a robust TO-220 package, this through-hole-mount component offers a 400V collector-emitter breakdown voltage (Vce) and a maximum collector current (Ic) of 12A, making it suitable for high-voltage, high-current circuits. With a power dissipation capability of 100W and an operating junction temperature (TJ) of 150°C, the ST13009 ensures reliable performance under rigorous conditions. Its low saturation voltage (2.5V @ 3A, 12A) and DC current gain (hFE) of 10 @ 8A, 5V further enhance efficiency in switching applications.
Compared to similar transistors, the ST13009 stands out for its balanced combination of voltage tolerance, current capacity, and thermal stability, making it a preferred choice for industrial and automotive applications.
The ST13009 NPN transistor is a versatile, high-reliability component engineered for high-power switching applications. Its exceptional voltage/current ratings, low saturation loss, and thermal resilience make it a superior choice for power electronics, industrial systems, and automotive designs. With STMicroelectronics' quality assurance and compliance with RoHS3/REACH standards, the ST13009 delivers both performance and sustainability, ensuring long-term reliability in demanding environments.
Download datasheets and manufacturer documentation for ST13009