STMicroelectronics_STGB30M65DF2
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STMicroelectronics
STGB30M65DF2

279-STGB30M65DF2
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Trench gate field-stop IGBT M series, 650 V 30 A low loss
18 Weeks

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STGB30M65DF2 Description

STGB30M65DF2 Description

The STGB30M65DF2 is a high-performance IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics, designed for applications requiring efficient power management and control. This single IGBT features a Trench Field Stop technology, which enhances the device's performance and reliability. With a maximum collector-emitter breakdown voltage of 650V and a maximum continuous collector current of 30A, the STGB30M65DF2 is ideal for various high-power applications.

STGB30M65DF2 Features

  • Technical Specifications: The STGB30M65DF2 boasts a reverse recovery time (trr) of 140ns, ensuring fast switching capabilities. It has a low on/off time (31.6ns/115ns) at 25°C, contributing to its high efficiency. The device also offers a low Vce(on) of 2V at 15V and 30A, minimizing power losses.
  • Performance Benefits: The STGB30M65DF2's low switching energy (300µJ on, 960µJ off) and gate charge of 80nC contribute to its high efficiency and fast response times. Its moisture sensitivity level (MSL) of 1 allows for unlimited storage, making it suitable for various environments.
  • Unique Advantages: This IGBT stands out with its RoHS3 compliance, REACH unaffected status, and EAR99 ECCN, ensuring compliance with global regulations. Its surface mount packaging and standard input type make it versatile for various applications.

STGB30M65DF2 Applications

The STGB30M65DF2 is ideal for high-power applications such as:

  • Industrial Motor Control: Its high current and voltage ratings make it suitable for motor drives and control systems.
  • Power Supplies: The device's low conduction and switching losses make it an excellent choice for power supply designs.
  • Renewable Energy Systems: Its high efficiency and reliability make it suitable for solar inverters and wind power systems.
  • Electric Vehicles: The STGB30M65DF2 can be used in electric vehicle charging systems and powertrain control.

Conclusion of STGB30M65DF2

The STGB30M65DF2 is a high-performance IGBT from STMicroelectronics, offering a combination of high efficiency, fast switching, and compliance with global regulations. Its unique features and advantages make it an ideal choice for various high-power applications, including industrial motor control, power supplies, renewable energy systems, and electric vehicles. With its robust performance and reliability, the STGB30M65DF2 is a valuable addition to any high-power electronics design.

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STGB30M65DF2 is a Single IGBTs from STMicroelectronics. This product page provides its main specifications, pricing information, availability, and inquiry options.
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Availability (In Stock : 325 )
Quantity Unit Price Ext. Price
10+ $1.41943 $14.19
30+ $1.12879 $33.86
100+ $0.97416 $97.42
500+ $0.90528 $452.64
1000+ $0.87576 $875.76
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