The STGW30H65FB is a high-performance IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics, designed for demanding power electronics applications. With a maximum collector-emitter breakdown voltage of 650V, it can handle high voltages while maintaining reliability. The device features a Trench Field Stop IGBT type, which offers improved switching performance and reduced conduction losses. The STGW30H65FB is compliant with REACH and RoHS3 regulations, ensuring environmental safety and compliance with global standards.
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The STGW30H65FB is ideal for a wide range of power electronics applications, including:
The STGW30H65FB from STMicroelectronics is a high-performance IGBT designed for demanding power electronics applications. Its advanced Trench Field Stop technology, fast switching times, and low conduction losses make it an ideal choice for high-efficiency power conversion. With its compliance with REACH and RoHS3 regulations, the STGW30H65FB is a reliable and environmentally friendly solution for a wide range of applications, including industrial motor control, power supplies, renewable energy, and electric vehicles.
Download datasheets and manufacturer documentation for STGW30H65FB