STMicroelectronics_STGW30H65FB

STMicroelectronics
STGW30H65FB  
Single IGBTs

STMicroelectronics
STGW30H65FB
279-STGW30H65FB
Ersa
STMicroelectronics-STGW30H65FB-datasheets-4181738.pdf
IGBT 650V 30A 260W TO-247
In Stock : 387

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STGW30H65FB Description

STGW30H65FB Description

The STGW30H65FB is a high-performance IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics, designed for demanding power electronics applications. With a maximum collector-emitter breakdown voltage of 650V, it can handle high voltages while maintaining reliability. The device features a Trench Field Stop IGBT type, which offers improved switching performance and reduced conduction losses. The STGW30H65FB is compliant with REACH and RoHS3 regulations, ensuring environmental safety and compliance with global standards.

STGW30H65FB Features

  • Technical Specifications:

    • Maximum collector current (Ic): 30A
    • Maximum power dissipation: 260W
    • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
    • Switching energy: 151µJ (on), 293µJ (off)
    • Gate charge: 149 nC
    • Td (on/off) @ 25°C: 37ns/146ns
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Package: Tube (TO-247)
  • Performance Benefits:

    • Improved switching performance and reduced conduction losses due to Trench Field Stop technology
    • Fast switching times (37ns/146ns) for efficient power conversion
    • Low Vce(on) for reduced power dissipation and improved efficiency
    • Low switching energy for reduced power losses and improved efficiency
  • Unique Advantages:

    • Compliance with REACH and RoHS3 regulations for environmental safety and global market access
    • Moisture Sensitivity Level 1 for unlimited storage time before reflow soldering
    • Through-hole mounting type for easy integration into existing designs

STGW30H65FB Applications

The STGW30H65FB is ideal for a wide range of power electronics applications, including:

  • Industrial Motor Control: High-efficiency motor drives and variable frequency drives (VFDs) for industrial automation and control systems.
  • Power Supplies: High-power switching power supplies and uninterruptible power supplies (UPS) for reliable power delivery.
  • Renewable Energy: Solar inverters and wind power converters for efficient energy generation and conversion.
  • Electric Vehicles: Traction inverters and battery chargers for electric and hybrid vehicles.

Conclusion of STGW30H65FB

The STGW30H65FB from STMicroelectronics is a high-performance IGBT designed for demanding power electronics applications. Its advanced Trench Field Stop technology, fast switching times, and low conduction losses make it an ideal choice for high-efficiency power conversion. With its compliance with REACH and RoHS3 regulations, the STGW30H65FB is a reliable and environmentally friendly solution for a wide range of applications, including industrial motor control, power supplies, renewable energy, and electric vehicles.

Tech Specifications

Configuration
PPAP
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Package / Case
Technology
Typical Collector Emitter Saturation Voltage (V)
REACH Status
Channel Type
Maximum Gate Emitter Voltage (V)
EU RoHS
IGBT Type
Moisture Sensitivity Level (MSL)
Operating Temperature
Test Condition
Current - Collector (Ic) (Max)
ECCN
Supplier Temperature Grade
Mounting Type
Standard Package Name
Current - Collector Pulsed (Icm)
Pin Count
Mounting
Maximum Gate Emitter Leakage Current (uA)
Gate Charge
Lead Shape
SVHC
HTSUS
Package
PCB changed
HTS
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Td (on/off) @ 25°C
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Input Type
Switching Energy
Maximum Continuous Collector Current (A)
SVHC Exceeds Threshold
Package Length
Series
Vce(on) (Max) @ Vge, Ic
Tab
Power - Max
Part Status
Package Width
Base Product Number
Mounting Style
Unit Weight
Gate-Emitter Leakage Current
RoHS
Minimum Operating Temperature
Continuous Collector Current Ic Max
Collector-Emitter Saturation Voltage
Collector- Emitter Voltage VCEO Max
Continuous Collector Current at 25 C
Maximum Operating Temperature
Pd - Power Dissipation
USHTS
Maximum Gate Emitter Voltage

STGW30H65FB Documents

Download datasheets and manufacturer documentation for STGW30H65FB

Ersa IGBT/IPM TFS A/T Add 22/Oct/2021      
Ersa STGW(T)30H65FB      
Ersa Standard outer labelling 15/Nov/2023      
Ersa STGW(T)30H65FB      

Shopping Guide

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