STMicroelectronics_STGW30H65FB
original

STMicroelectronics
STGW30H65FB

279-STGW30H65FB
PDF Datasheet
Trench gate field-stop 650 V, 30 A high speed HB series IGBT
18 Weeks

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Tech Specifications

Package/Case
TO-247-3
Collector Emitter Breakdown Voltage
650V
Collector Emitter Saturation Voltage
1.75V
Collector-emitter Voltage-Max
2V
Input Type
STANDARD
Lead Free
Lead Free
Max Collector Current
30A
Max Operating Temperature
175°C
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STGW30H65FB Description

STGW30H65FB Description

The STGW30H65FB is a high-performance IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics, designed for demanding power electronics applications. With a maximum collector-emitter breakdown voltage of 650V, it can handle high voltages while maintaining reliability. The device features a Trench Field Stop IGBT type, which offers improved switching performance and reduced conduction losses. The STGW30H65FB is compliant with REACH and RoHS3 regulations, ensuring environmental safety and compliance with global standards.

STGW30H65FB Features

  • Technical Specifications:

    • Maximum collector current (Ic): 30A
    • Maximum power dissipation: 260W
    • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
    • Switching energy: 151µJ (on), 293µJ (off)
    • Gate charge: 149 nC
    • Td (on/off) @ 25°C: 37ns/146ns
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Package: Tube (TO-247)
  • Performance Benefits:

    • Improved switching performance and reduced conduction losses due to Trench Field Stop technology
    • Fast switching times (37ns/146ns) for efficient power conversion
    • Low Vce(on) for reduced power dissipation and improved efficiency
    • Low switching energy for reduced power losses and improved efficiency
  • Unique Advantages:

    • Compliance with REACH and RoHS3 regulations for environmental safety and global market access
    • Moisture Sensitivity Level 1 for unlimited storage time before reflow soldering
    • Through-hole mounting type for easy integration into existing designs

STGW30H65FB Applications

The STGW30H65FB is ideal for a wide range of power electronics applications, including:

  • Industrial Motor Control: High-efficiency motor drives and variable frequency drives (VFDs) for industrial automation and control systems.
  • Power Supplies: High-power switching power supplies and uninterruptible power supplies (UPS) for reliable power delivery.
  • Renewable Energy: Solar inverters and wind power converters for efficient energy generation and conversion.
  • Electric Vehicles: Traction inverters and battery chargers for electric and hybrid vehicles.

Conclusion of STGW30H65FB

The STGW30H65FB from STMicroelectronics is a high-performance IGBT designed for demanding power electronics applications. Its advanced Trench Field Stop technology, fast switching times, and low conduction losses make it an ideal choice for high-efficiency power conversion. With its compliance with REACH and RoHS3 regulations, the STGW30H65FB is a reliable and environmentally friendly solution for a wide range of applications, including industrial motor control, power supplies, renewable energy, and electric vehicles.

FAQ

What is the mounting type of STGW30H65FB?
STGW30H65FB uses a Through Hole mounting style based on the listed product specifications.
What voltage specification is listed for STGW30H65FB?
What is the standard lead time for STGW30H65FB?
Is STGW30H65FB currently in stock?
What operating temperature range does STGW30H65FB support?
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