STMicroelectronics_STS2DNF30L

STMicroelectronics
STS2DNF30L  
FET, MOSFET Arrays

STMicroelectronics
STS2DNF30L
289-STS2DNF30L
MOSFET 2N-CH 30V 3A 8SOIC
In Stock : 2394

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    STS2DNF30L Description

    STS2DNF30L Description

    The STS2DNF30L is a MOSFET 2N-CH 30V 3A 8SOIC from STMicroelectronics, designed to provide high performance and reliability in various electronic applications. This product is part of the STripFET™ series and utilizes MOSFET (Metal Oxide) technology. With a maximum power rating of 2W and a continuous drain current of 3A at 25°C, the STS2DNF30L is well-suited for applications requiring efficient power management.

    STS2DNF30L Features

    • Logic Level Gate: The STS2DNF30L features a logic level gate, enabling compatibility with logic level inputs for easy integration into digital systems.
    • Low Input Capacitance: With a maximum input capacitance (Ciss) of 121pF @ 25V, the STS2DNF30L offers fast switching performance and reduced power consumption.
    • Low Gate Charge: The maximum gate charge (Qg) of 4.5nC @ 10V contributes to the device's overall efficiency and performance.
    • Low Rds On: The maximum Rds On of 110mOhm @ 1A, 10V ensures low on-resistance and minimal power loss during operation.
    • Surface Mount: The STS2DNF30L is designed for surface mount applications, making it suitable for use in compact and space-constrained designs.
    • 8SOIC Package: The device is available in an 8-pin SOIC package, providing a compact and reliable solution for various applications.

    STS2DNF30L Applications

    The STS2DNF30L is ideal for use in a wide range of applications, including:

    • Power Management: Due to its low on-resistance and high current handling capabilities, the STS2DNF30L is well-suited for power management applications in electronic devices.
    • Automotive Electronics: The device's ability to handle high voltages and currents makes it suitable for use in automotive electronics, such as power windows and seat controls.
    • Industrial Control Systems: The STS2DNF30L can be used in industrial control systems, where high reliability and performance are critical.

    Conclusion of STS2DNF30L

    The STS2DNF30L is a versatile and high-performance MOSFET from STMicroelectronics, offering a range of features that make it suitable for various applications. Its low input capacitance, low gate charge, and low on-resistance contribute to its overall efficiency and performance. While it is not recommended for new designs, the STS2DNF30L remains a reliable option for existing applications requiring a MOSFET with high voltage and current handling capabilities.

    Tech Specifications

    Unit Weight
    Configuration
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Product
    PPAP
    Fall Time
    Automotive
    RoHS
    Maximum IDSS (uA)
    Typical Turn-On Delay Time
    REACH Status
    Channel Type
    Maximum Continuous Drain Current (A)
    Maximum Pulsed Drain Current @ TC=25°C (A)
    Maximum Drain Source Voltage (V)
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Typical Reverse Recovery Charge (nC)
    Mounting
    Rise Time
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    Vgs th - Gate-Source Threshold Voltage
    Package
    Maximum Power Dissipation on PCB @ TC=25°C (W)
    Typical Reverse Recovery Time (ns)
    Qg - Gate Charge
    Process Technology
    Package Height
    Typical Gate to Source Charge (nC)
    Maximum Operating Temperature
    Width
    RoHS Status
    Typical Gate Threshold Voltage (V)
    Transistor Polarity
    Typical Gate Charge @ 10V (nC)
    Maximum Diode Forward Voltage (V)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Type
    Typical Output Capacitance (pF)
    Length
    Power - Max
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Typical Rise Time (ns)
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Transistor Type
    Package / Case
    Number of Channels
    Technology
    EU RoHS
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Vgs(th) (Max) @ Id
    Maximum Continuous Drain Current on PCB @ TC=25°C (A)
    Pin Count
    Minimum Gate Threshold Voltage (V)
    Typical Reverse Transfer Capacitance @ Vds (pF)
    Lead Shape
    HTSUS
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Typical Fall Time (ns)
    Maximum Positive Gate Source Voltage (V)
    Mfr
    Height
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    Vgs - Gate-Source Voltage
    Typical Gate Plateau Voltage (V)
    Typical Turn-Off Delay Time
    Package Length
    Series
    Operating Junction Temperature (°C)
    Pd - Power Dissipation
    Base Product Number
    Operating Temperature (°C) (max)
    Operating Temperature (°C) (min)
    Grade
    ECCN (EU)
    RoHs compliant

    STS2DNF30L Documents

    Download datasheets and manufacturer documentation for STS2DNF30L

    Ersa STS2DNF30L 19/May/2023      
    Ersa STS2DNF30L      
    Ersa Box Label Chg 28/Jul/2016      
    Ersa STS2DNF30L View All Specifications      
    Ersa STS2DNF30L      

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