STMicroelectronics_STS10DN3LH5

STMicroelectronics
STS10DN3LH5  
FET, MOSFET Arrays

STMicroelectronics
STS10DN3LH5
289-STS10DN3LH5
Ersa
STMicroelectronics-STS10DN3LH5-datasheets-11199104.pdf
MOSFET 2N-CH 30V 10A 8SOIC
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    STS10DN3LH5 Description

    STS10DN3LH5 Description

    The STS10DN3LH5 is a high-performance MOSFET from STMicroelectronics, designed for use in a wide range of electronic applications. This device is part of the STripFET™ V series and features a logic level gate, making it ideal for interfacing with digital circuits. With a maximum drain-to-source voltage of 30V and a continuous drain current of 10A at 25°C, the STS10DN3LH5 offers excellent power handling capabilities. The device is packaged in an 8-pin SOIC package, making it suitable for surface mount applications.

    STS10DN3LH5 Features

    • Logic Level Gate: The STS10DN3LH5 features a logic level gate, allowing it to interface directly with digital circuits without the need for additional level shifting components.
    • Low Input Capacitance: With a maximum input capacitance of 475pF at 25V, the STS10DN3LH5 offers fast switching performance, reducing power consumption and improving overall system efficiency.
    • Low Gate Charge: The maximum gate charge of 4.6nC at 5V ensures quick gate charging and discharging, further improving switching speed and reducing power loss.
    • Low Rds On: The maximum Rds On of 21mOhm at 5A and 10V results in minimal on-resistance, reducing power dissipation and improving efficiency.
    • RoHS Compliant: The STS10DN3LH5 is compliant with the RoHS3 directive, making it suitable for use in environmentally friendly applications.
    • REACH Unaffected: This device is not affected by the REACH regulation, ensuring continued availability and reducing supply chain risks.

    STS10DN3LH5 Applications

    The STS10DN3LH5 is ideal for a variety of applications where high power handling, fast switching, and low power consumption are required. Some specific use cases include:

    • Power Supplies: The STS10DN3LH5's high voltage and current ratings make it suitable for use in power supply designs, particularly in applications requiring high efficiency and fast transient response.
    • Motor Control: The device's low on-resistance and fast switching capabilities make it an excellent choice for motor control applications, such as brushless DC motors and stepper motors.
    • Automotive Electronics: The STS10DN3LH5's robust performance and automotive-grade packaging make it suitable for use in various automotive applications, including lighting, power windows, and engine control systems.

    Conclusion of STS10DN3LH5

    The STS10DN3LH5 is a versatile and high-performance MOSFET from STMicroelectronics, offering excellent power handling, fast switching, and low power consumption. Its unique features, such as the logic level gate and low input capacitance, make it an ideal choice for a wide range of applications, including power supplies, motor control, and automotive electronics. While the product is not recommended for new designs, it remains a reliable and cost-effective solution for existing applications.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Transistor Type
    Package / Case
    Number of Channels
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Typical Fall Time (ns)
    Package Height
    Mfr
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    Vgs - Gate-Source Voltage
    Transistor Polarity
    Package Length
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Power - Max
    Part Status
    Package Width
    Pd - Power Dissipation
    Base Product Number
    ECCN (EU)
    Country of Origin

    STS10DN3LH5 Documents

    Download datasheets and manufacturer documentation for STS10DN3LH5

    Ersa STS10DN3LH5      
    Ersa Box Label Chg 28/Jul/2016      
    Ersa STS10DN3LH5 View All Specifications      
    Ersa STS10DN3LH5      

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