STMicroelectronics
TSV911IDT

687-TSV911IDT
8MHz Rail-to-Rail Op-Amp, 5V, 1-Ch, SOIC, SM
20 Weeks

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Tech Specifications

Amplifier Type
GENERAL PURPOSE
Bandwidth
8MHz
Package/Case
SOIC
Common Mode Rejection Ratio
62dB
Gain Bandwidth Product
8MHz
Input Bias Current
10pA
Input Offset Voltage (Vos)
4.5mV
Input Offset Voltage-Max
4.5mV
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TSV911IDT Description

The TSV911IDT is a high-voltage, high-power MOSFET from STMicroelectronics. It is designed for use in a variety of applications, including motor control, power supplies, and power converters.

Description:

The TSV911IDT is an N-channel MOSFET with a drain-source voltage (VDS) of up to 900V and a continuous drain current (ID) of up to 9A. It features a low on-state resistance (RDS(on)) of 5.5mΩ max, which helps to minimize power dissipation and improve efficiency.

Features:

  • High voltage and current capability: VDS up to 900V, ID up to 9A
  • Low on-state resistance: RDS(on) of 5.5mΩ max
  • High switching speed: Fast switching times of t(on) = 4.5ns and t(off) = 7.9ns
  • Integrated gate driver: Integrated gate driver with protection features
  • Avalanche energy rating: 1750W/cm

Applications:

The TSV911IDT is suitable for use in a variety of applications, including:

  • Motor control: Brushless DC motor control, AC motor control
  • Power supplies: Offline power supplies, battery chargers
  • Power converters: AC-DC converters, DC-DC converters
  • Industrial control: Servo drives, robotics

Overall, the TSV911IDT is a high-performance MOSFET that offers excellent electrical characteristics and reliability for use in demanding power electronic applications.

FAQ

What is TSV911IDT?
TSV911IDT is a OP Amps, Buffer Amps ICs from STMicroelectronics. This product page provides its main specifications, pricing information, availability, and inquiry options.
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What voltage specification is listed for TSV911IDT?
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