STMicroelectronics

VND10N0613TR

The VND10N0613TR is a high voltage N-channel power MOSFET manufactured by STMicroelectronics. It is designed for high voltage applications and offers excellent electrical characteristics and performance.

Description:

The VND10N0613TR is an N-channel enhancement mode field effect transistor (FET) that features a high voltage rating of 650V and a continuous drain current of 4.2A. It is housed in a TO-220AB package, which is suitable for a wide range of applications.

Features:

1. High voltage rating of 650V
2. Continuous drain current of 4.2A
3. Low on-state resistance (RDS(on))
4. Fast switching speed
5. High input impedance
6. Logic level gate drive compatible
7. Suitable for use in a wide range of applications

Applications:

The VND10N0613TR is suitable for use in a variety of high voltage applications, including:

1. Switch mode power supplies (SMPS)
2. Motor control applications
3. Battery charging circuits
4. Inverters
5. DC-DC converters
6. High voltage switching applications
7. Industrial control systems

Overall, the VND10N0613TR is a versatile and high-performance power MOSFET that offers excellent electrical characteristics and performance for a wide range of high voltage applications.