STMicroelectronics

VND5E160AJTR-E  

Power Distribution Switches, Load Drivers

The VND5E160AJTR-E is a high voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in a variety of applications, including power switching and amplification in power electronics circuits.

Description:

The VND5E160AJTR-E is an N-channel enhancement mode field effect transistor (MOSFET) with a high voltage rating of 160V and a continuous drain current (Id) of 5.1A. It is housed in a TO-220 package, which is suitable for use in a wide range of power electronics applications.

Features:

• High voltage rating of 160V
• Continuous drain current (Id) of 5.1A
• N-channel enhancement mode MOSFET
• Low on-state resistance (RDS(on))
• Suitable for use in power switching and amplification applications
• TO-220 package

Applications:

The VND5E160AJTR-E is suitable for use in a variety of power electronics applications, including:

• Power switching and amplification in power supplies
• Motor control and drive circuits
• Battery protection circuits
• Inverter circuits for renewable energy systems
• Power management circuits for industrial and automotive applications

Overall, the VND5E160AJTR-E is a high voltage N-channel MOSFET that offers high performance and reliability in a wide range of power electronics applications. Its high voltage rating and low on-state resistance make it an ideal choice for use in power switching and amplification circuits.

VND5E160AJTR-E Documents

Download datasheets and manufacturer documentation for VND5E160AJTR-E

PCN Assembly/Origin :

Mult Dev Wafer Fab Site Chg 26/Oct/2020      

Datasheets :

VND5E160AJ-E      

PCN Packaging :

Material Barrier Bag 17/Dec/2020       Mult Dev Label Chgs 29/Oct/2020      

Other Related Documents :

VND5E160AJ-E View All Specifications