STMicroelectronics_VND5T100LAJTR-E
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STMicroelectronics
VND5T100LAJTR-E

726-VND5T100LAJTR-E
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Current Limit SW 2-IN 2-OUT to 30A Automotive 12-Pin PowerSSO EP T/R
26 Weeks

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Tech Specifications

Fault Protection
Over Temperature
Interface
On/Off
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Output Current
16A
Max Supply Current
6mA
Max Supply Voltage
36V
Min Supply Voltage
8V
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VND5T100LAJTR-E Description

The VND5T100LAJTR-E is a high voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and energy management systems.

Description:

The VND5T100LAJTR-E is an N-channel enhancement mode field-effect transistor (FET) with a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 5.1A. It features a low on-state resistance (RDS(on)) of 4.3mΩ max, which helps to minimize power dissipation and improve efficiency in power switching applications.

Features:

  1. High voltage rating: The VND5T100LAJTR-E is designed to handle high voltage applications, with a VDS of up to 100V.
  2. Low on-state resistance: The low RDS(on) of 4.3mΩ max helps to minimize power dissipation and improve efficiency in power switching applications.
  3. High switching speed: The device has a fast switching time, making it suitable for high-frequency applications.
  4. Thermal protection: The VND5T100LAJTR-E includes an integrated thermal shutdown protection feature, which helps to protect the device from overheating in the event of a fault or overload condition.
  5. Avalanche energy capable: The device is designed to withstand high energy pulses during avalanche conditions, making it suitable for use in applications with high energy transients.

Applications:

The VND5T100LAJTR-E is suitable for a wide range of power electronic applications, including:

  1. Motor control: The device can be used in brushless DC motor control applications, as well as in AC and universal motor control circuits.
  2. Power supplies: The VND5T100LAJTR-E is suitable for use in power supply applications, such as switched-mode power supplies (SMPS) and power factor correction (PFC) circuits.
  3. Energy management systems: The device can be used in energy management systems, such as battery management systems and solar energy management systems.
  4. Lighting applications: The VND5T100LAJTR-E can be used in LED lighting applications, such as streetlights and industrial lighting systems.
  5. Industrial control: The device can be used in various industrial control applications, such as robotics, conveyor systems, and manufacturing equipment.

Overall, the VND5T100LAJTR-E is a versatile and high-performance MOSFET transistor that offers excellent electrical characteristics and reliability for a wide range of power electronic applications.

FAQ

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Yes. VND5T100LAJTR-E currently shows 2 unit(s) in stock.
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Availability (In Stock : 2 )
Quantity Unit Price Ext. Price
1+ $5.52515 $5.53
10+ $4.72115 $47.21
30+ $4.23085 $126.93
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