Texas Instruments
CSD25302Q2  
Single FETs, MOSFETs

Texas Instruments
CSD25302Q2
278-CSD25302Q2
Ersa
Texas Instruments-CSD25302Q2-datasheets-11260230.pdf
MOSFET P-CH 20V 5A 6SON
In Stock : 44380

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CSD25302Q2 Description

The CSD25302Q2 is a high-performance, single-chip gate driver from Texas Instruments. It is designed to drive power MOSFETs and IGBTs in a wide range of applications, including industrial motor control, power supplies, and renewable energy systems.

Description:

The CSD25302Q2 is a highly integrated gate driver that provides precise control of high-side and low-side MOSFETs or IGBTs. It features a wide input voltage range, low propagation delay, and low jitter, making it suitable for high-performance applications. The device also includes advanced protection features, such as overcurrent protection, over-temperature protection, and desaturation detection.

Features:

  • Single-chip gate driver for high-side and low-side MOSFETs or IGBTs
  • Wide input voltage range (10V to 60V)
  • Low propagation delay (as low as 18ns)
  • Low jitter (±60ps)
  • Advanced protection features, including overcurrent, over-temperature, and desaturation detection
  • Spread spectrum clocking to reduce electromagnetic interference (EMI)
  • Monolithic design for high reliability and ease of use
  • Small package size (5mm x 7mm QFN)

Applications:

The CSD25302Q2 is suitable for a wide range of applications, including:

  1. Industrial motor control: The device can be used to drive high-power MOSFETs or IGBTs in motor control applications, such as in electric vehicles, robotics, and factory automation systems.
  2. Power supplies: The gate driver can be used in power supply applications, such as in switching power supplies, battery chargers, and uninterruptible power supplies (UPS).
  3. Renewable energy systems: The CSD25302Q2 can be used to drive power MOSFETs or IGBTs in renewable energy systems, such as solar inverters and wind turbine converters.
  4. Electric vehicles (EVs): The gate driver can be used in the powertrain systems of electric vehicles, such as in the traction inverter and onboard charger.
  5. High-voltage applications: The device can be used in high-voltage applications, such as in power transmission and distribution systems.

In summary, the CSD25302Q2 is a high-performance, single-chip gate driver from Texas Instruments that is designed to drive power MOSFETs and IGBTs in a wide range of applications. Its advanced features, such as low propagation delay, low jitter, and advanced protection features, make it suitable for high-performance applications, while its monolithic design and small package size make it easy to use and highly reliable.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Typical Input Capacitance @ Vds (pF)
Category
Configuration
PCB changed
Typical Turn-Off Delay Time (ns)
Number of Elements per Chip
ECCN (US)
Typical Rise Time (ns)
PPAP
Maximum Power Dissipation (mW)
Channel Mode
Typical Turn-On Delay Time (ns)
Automotive
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Supplier Package
Typical Fall Time (ns)
Process Technology
Package Height
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Maximum Gate Source Voltage (V)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
Package Length
Standard Package Name
Pin Count
Mounting
Part Status
Package Width
Typical Gate Charge @ Vgs (nC)

CSD25302Q2 Documents

Download datasheets and manufacturer documentation for CSD25302Q2

Ersa CSD25302Q2      
Ersa Multiple Devices 20/Feb/2014      
Ersa CSD25302Q2      
Ersa Marking Standardization 29/Jan/2015      

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