Texas Instruments
CSD25310Q2

278-CSD25310Q2
PDF Datasheet
P-Ch MOSFET, -20V, 23.9mOhm, 6-WSON
6 Weeks

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Tech Specifications

Number of Terminals
6
Terminal Position
DUAL
Number of Elements
1
RoHS
Yes
Eccn Code
EAR99
Lead Free
Yes
HTS Code
8541.29.00.95
REACH
Compliant
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CSD25310Q2 Description

The Texas Instruments CSD25310Q2 is a highly integrated gate driver IC designed for use in battery management systems (BMS) for electric vehicles (EVs) and hybrid electric vehicles (HEVs). It is a member of the company's portfolio of silicon carbide (SiC) power devices, which are known for their high efficiency and reliability in high-voltage applications.

Description:

The CSD25310Q2 is a monolithic, high-voltage half-bridge gate driver IC that is specifically designed to drive SiC MOSFETs and IGBTs in high-voltage power applications. It is offered in a compact, thermally efficient QFN package, making it suitable for use in space-constrained applications.

Features:

  1. High-voltage operation: The device can operate with supply voltages up to 18V, making it suitable for use in high-voltage power systems.
  2. Integrated gate driver: The IC includes a half-bridge gate driver that can drive SiC MOSFETs and IGBTs with high efficiency and low switching losses.
  3. Advanced protection features: The device includes a range of built-in protection features, including overcurrent protection, overvoltage protection, and short-circuit protection.
  4. High thermal efficiency: The QFN package is designed to dissipate heat effectively, ensuring reliable operation in high-temperature environments.
  5. Low quiescent current: The device has a low quiescent current, which helps to minimize power consumption in battery-powered applications.
  6. Wide operating temperature range: The CSD25310Q2 can operate reliably over a wide temperature range of -40°C to 125°C.

Applications:

The CSD25310Q2 is well-suited for use in a variety of high-voltage power applications, including:

  1. Electric vehicles (EVs) and hybrid electric vehicles (HEVs): The device can be used in the battery management system (BMS) of EVs and HEVs to drive SiC MOSFETs and IGBTs in the powertrain.
  2. Solar inverters: The IC can be used to drive SiC MOSFETs in solar inverters, improving efficiency and reducing system size.
  3. Industrial motor drives: The CSD25310Q2 can be used in motor drives for industrial applications, such as robotics and manufacturing equipment, to improve efficiency and reduce system size.
  4. Power supplies: The device can be used in high-voltage power supplies for applications such as telecommunications equipment and data centers.

Overall, the Texas Instruments CSD25310Q2 is a highly integrated, high-performance gate driver IC that is well-suited for use in a variety of high-voltage power applications. Its advanced features and compact package make it an ideal choice for designers looking to improve efficiency and reduce system size in their designs.

FAQ

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CSD25310Q2 is a Single FETs, MOSFETs from Texas Instruments. This product page provides its main specifications, pricing information, availability, and inquiry options.
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Availability (In Stock : 2 )
Quantity Unit Price Ext. Price
1+ $0.57085 $0.57
10+ $0.45772 $4.58
30+ $0.40972 $12.29
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