Texas Instruments_TPD1E05U06DPYR

Texas Instruments
TPD1E05U06DPYR  
TVS Diodes

Texas Instruments
TPD1E05U06DPYR
144-TPD1E05U06DPYR
Ersa
Texas Instruments-TPD1E05U06DPYR-datasheets-1084654.pdf
TVS DIODE 5.5VWM 14VC 2X1SON
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    TPD1E05U06DPYR Description

    The TPD1E05U06DPYR is a high voltage, high-side gate driver IC from Texas Instruments. It is designed to drive power MOSFETs and IGBTs in a wide range of applications, including motor control, power conversion, and renewable energy systems.

    Description:

    The TPD1E05U06DPYR is a monolithic high voltage gate driver that provides high side and low side gate drive for power MOSFETs and IGBTs. It features a high voltage bootstrap supply, which allows it to drive gates with voltages up to 60V higher than its supply voltage. The device also includes a range of protection features, such as overcurrent protection, undervoltage lockout, and thermal shutdown.

    Features:

    • High voltage gate drive: The TPD1E05U06DPYR can drive gates with voltages up to 60V higher than its supply voltage.
    • Monolithic design: The device is a single chip solution that provides both high side and low side gate drive.
    • Wide supply voltage range: The TPD1E05U06DPYR can operate from a supply voltage of 7V to 60V.
    • Overcurrent protection: The device includes overcurrent protection to prevent damage to the power MOSFETs or IGBTs.
    • Undervoltage lockout: The device includes undervoltage lockout to prevent it from operating if the supply voltage falls below a certain level.
    • Thermal shutdown: The device includes thermal shutdown to protect against overheating.

    Applications:

    The TPD1E05U06DPYR is suitable for a wide range of applications, including:

    • Motor control: The device can be used to drive the gates of power MOSFETs or IGBTs in motor control applications, such as in industrial motor drives or automotive traction inverters.
    • Power conversion: The device can be used to drive the gates of power MOSFETs or IGBTs in power conversion applications, such as in DC-DC converters or AC-DC power supplies.
    • Renewable energy systems: The device can be used to drive the gates of power MOSFETs or IGBTs in renewable energy systems, such as in solar inverters or wind turbine converters.

    Overall, the TPD1E05U06DPYR is a versatile and high-performance gate driver IC that can be used in a wide range of power electronic applications. Its monolithic design, high voltage capability, and range of protection features make it an excellent choice for driving power MOSFETs and IGBTs in demanding applications.

    Tech Specifications

    Peak Pulse Power Dissipation (W)
    Unit Weight
    Current - Peak Pulse (10/1000µs)
    Configuration
    Vrwm (V)
    PPAP
    Interface type
    Bi-/uni-directional
    Maximum Reverse Leakage Current (uA)
    Product Status
    Power - Peak Pulse
    Automotive
    RoHS
    Supplier Package
    Package / Case
    Number of Channels
    Vesd - Voltage ESD Contact
    REACH Status
    Unidirectional Channels
    Fail Safe Protection
    IEC 61000-4-2 contact (±V)
    EU RoHS
    Carrier
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Ipp - Peak Pulse Current
    Operating temperature range (°C)
    Termination Style
    Capacitance Value (pF)
    ECCN
    Supplier Temperature Grade
    MSL rating / Peak reflow
    Mounting Type
    Standard Package Name
    Pin Count
    Mounting
    IO capacitance (typ) (pF)
    Package name
    Lead Shape
    Clamping Voltage
    SVHC
    HTSUS
    Package
    Pins
    USHTS
    PCB changed
    HTS
    Number of Elements per Chip
    Cd - Diode Capacitance
    Rating
    ECCN (US)
    Minimum Breakdown Voltage (V)
    Breakdown voltage (min) (V)
    Voltage - Breakdown (Min)
    Supplier Device Package
    Direction Type
    Minimum Operating Temperature (°C)
    Peak pulse power (8/20 μs) (max) (W)
    Maximum Peak Pulse Current (A)
    Maximum Operating Temperature (°C)
    Voltage - Clamping (Max) @ Ipp
    Dynamic resistance (typ)
    Voltage - Reverse Standoff (Typ)
    Package Height
    Mfr
    Breakdown Voltage
    IEC 61000-4-5 (A)
    Polarity
    Maximum Operating Temperature
    Test Current (mA)
    Vesd - Voltage ESD Air Gap
    RoHS Status
    Power Line Protection
    Number of channels
    IO leakage current (max) (nA)
    Applications
    Capacitance @ Frequency
    Clamping voltage (V)
    Working Voltage
    Pppm - Peak Pulse Power Dissipation
    Package Length
    Maximum Working Voltage (V)
    Minimum Operating Temperature
    REACH
    Series
    Type
    Operating Supply Voltage
    Part Status
    Maximum Clamping Voltage (V)
    Lead finish / Ball material
    Package Width
    Maximum Breakdown Voltage (V)
    Base Product Number

    TPD1E05U06DPYR Documents

    Download datasheets and manufacturer documentation for TPD1E05U06DPYR

    Ersa Assembly Site 05/Apr/2023      
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