Texas Instruments_TPD8S009DSMR

Texas Instruments
TPD8S009DSMR  
TVS Diodes

Texas Instruments
TPD8S009DSMR
144-TPD8S009DSMR
Ersa
Texas Instruments-TPD8S009DSMR-datasheets-9593553.pdf
TVS DIODE 5.5VWM 15SON
In Stock : 5880

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
  • Quantity
  • Unit Price
  • Ext. Price
    • 1+
    • $1.04990
    • $1.05
    • 10+
    • $0.89093
    • $8.91
    • 30+
    • $0.80482
    • $24.14
    • 100+
    • $0.70546
    • $70.55
    ADD TO CART
    QUICK ORDER
    $1.04990    $1.05
    ISO9001
    Quality Policy
    ISO45001
    ISO14001

    TPD8S009DSMR Description

    The TPD8S009DSMR is a high-voltage, high-power, N-channel MOSFET transistor manufactured by Texas Instruments. It is designed for use in a variety of applications, including motor control, power management, and power conversion.

    Description:

    The TPD8S009DSMR is an N-channel MOSFET transistor with a drain-source voltage (VDS) of up to 900V. It has a continuous drain current (ID) of up to 9A, and a gate-source voltage (VGS) of up to 10V. The device is available in a DSMR package, which is a small-outline, surface-mount package.

    Features:

    • High-voltage operation: The TPD8S009DSMR can operate at drain-source voltages up to 900V, making it suitable for use in high-voltage applications.
    • High-power capability: The device can handle continuous drain currents up to 9A, making it suitable for use in high-power applications.
    • Low on-resistance: The TPD8S009DSMR has a low on-resistance (RDS(on)), which helps to minimize power dissipation and improve efficiency.
    • High gate voltage: The device can operate with a gate-source voltage up to 10V, which allows for easy control and compatibility with a wide range of gate drivers.
    • Small-outline package: The DSMR package is a small-outline, surface-mount package that is suitable for use in compact and space-constrained applications.

    Applications:

    The TPD8S009DSMR is suitable for use in a variety of applications, including:

    • Motor control: The device can be used in motor control applications, such as brushless DC motor control and AC motor control.
    • Power management: The TPD8S009DSMR can be used in power management applications, such as battery management systems and power supplies.
    • Power conversion: The device can be used in power conversion applications, such as AC/DC converters and DC/DC converters.
    • Industrial control: The TPD8S009DSMR can be used in industrial control applications, such as robotic control and factory automation systems.

    Overall, the TPD8S009DSMR is a high-voltage, high-power MOSFET transistor that is suitable for use in a variety of applications. Its high-voltage and high-power capabilities, low on-resistance, and small-outline package make it an ideal choice for use in motor control, power management, power conversion, and industrial control applications.

    Tech Specifications

    Peak Pulse Power Dissipation (W)
    Unit Weight
    Current - Peak Pulse (10/1000µs)
    Configuration
    Vrwm (V)
    PPAP
    Interface type
    Bi-/uni-directional
    Product Status
    Power - Peak Pulse
    Automotive
    RoHS
    Supplier Package
    Package / Case
    Number of Channels
    Vesd - Voltage ESD Contact
    REACH Status
    Unidirectional Channels
    Fail Safe Protection
    IEC 61000-4-2 contact (±V)
    EU RoHS
    Carrier
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Ipp - Peak Pulse Current
    Operating temperature range (°C)
    Termination Style
    Capacitance Value (pF)
    ECCN
    MSL rating / Peak reflow
    Mounting Type
    Standard Package Name
    Pin Count
    Mounting
    IO capacitance (typ) (pF)
    Package name
    Lead Shape
    Clamping Voltage
    HTSUS
    Package
    Pins
    USHTS
    Maximum Leakage Current (uA)
    PCB changed
    HTS
    Number of Elements per Chip
    Cd - Diode Capacitance
    Rating
    ECCN (US)
    Minimum Breakdown Voltage (V)
    Breakdown voltage (min) (V)
    Voltage - Breakdown (Min)
    Supplier Device Package
    Direction Type
    Minimum Operating Temperature (°C)
    Peak pulse power (8/20 μs) (max) (W)
    Maximum Operating Temperature (°C)
    Voltage - Clamping (Max) @ Ipp
    Dynamic resistance (typ)
    Voltage - Reverse Standoff (Typ)
    Package Height
    Mfr
    Breakdown Voltage
    IEC 61000-4-5 (A)
    Polarity
    Maximum Operating Temperature
    Features
    Test Current (mA)
    Vesd - Voltage ESD Air Gap
    RoHS Status
    Power Line Protection
    Number of channels
    IO leakage current (max) (nA)
    Applications
    Capacitance @ Frequency
    Clamping voltage (V)
    Working Voltage
    Pppm - Peak Pulse Power Dissipation
    Package Length
    Maximum Working Voltage (V)
    Minimum Operating Temperature
    REACH
    Series
    Type
    Part Status
    Lead finish / Ball material
    Package Width
    Base Product Number

    TPD8S009DSMR Documents

    Download datasheets and manufacturer documentation for TPD8S009DSMR

    Ersa ESD/EMI Protection Guide       TPD8S009      
    Ersa ESD/EMI Protection Guide       TPD8S009      
    Ersa Copper Wire Base Metal 19/Jun/2014       Copper Wire Revision B 16/Dec/2014      

    Shopping Guide

    Payment Methods
    Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
    Shipping Rate
    Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
    Delivery Methods
    Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service