The Texas Instruments UCC2813QDR-3Q1 is a high-performance, high-voltage, half-bridge gate driver IC designed for use in a variety of power electronic applications. The device is offered in a 16-lead QFN package and is designed to drive power MOSFETs and IGBTs with voltage ratings up to 600V.
The UCC2813QDR-3Q1 is a monolithic half-bridge gate driver that provides high-voltage drive capability and precise control of power MOSFETs and IGBTs. The device features a high output current capability, low propagation delay, and low cross-conduction time, making it ideal for use in high-speed switching applications.
The UCC2813QDR-3Q1 is suitable for a wide range of power electronic applications, including:
In summary, the Texas Instruments UCC2813QDR-3Q1 is a high-performance half-bridge gate driver IC that provides precise control and high-voltage drive capability for power MOSFETs and IGBTs. Its features make it suitable for a wide range of power electronic applications, including motor control, power supplies, and renewable energy systems.
Download datasheets and manufacturer documentation for UCC2813QDR-3Q1