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D2012UK
285-D2012UK
PDF Datasheet
Trans RF MOSFET N-CH 65V 4A 3-Pin Case DP
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Tech Specifications
Typical Input Capacitance @ Vds (pF)
48(Max)@0V
Configuration
Single
PCB changed
3
HTSUS
8541.29.00.75
Typical Power Gain (dB)
10(Min)
Number of Elements per Chip
1
ECCN
EAR99
PPAP
No
D2012UK Description
Trans RF MOSFET N-CH 65V 4A 3-Pin Case DP
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